- 您現在的位置：買賣IC網 > PDF目錄374394 > KSH30 (FAIRCHILD SEMICONDUCTOR CORP) General Purpose Amplifier Low Speed Switching Applications PDF資料下載
參數資料
| 型號： | KSH30 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Amplifier Low Speed Switching Applications |
| 中文描述： | 1 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 50K |
| 代理商： | KSH30 |
2002 Fairchild Semiconductor Corporation
Rev. B3, October 2002
K
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
* Pulse Test: PW
≤
300ms, Duty Cycle
≤
2%
Parameter
Value
Units
: KSH30
: KSH30C
- 40
- 100
V
V
V
CEO
Collector-Emitter Voltage
: KSH30
: KSH30C
- 40
- 100
- 5
- 1
- 3
- 0.4
15
1.56
150
- 65 ~ 150
V
V
V
A
A
A
W
W
°
C
°
C
V
EBO
I
C
I
CP
I
B
P
C
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (Ta=25
°
C)
Junction Temperature
Storage Temperature
T
J
T
STG
Test Condition
Min.
Max.
Units
: KSH30
: KSH30C
I
C
= - 30mA, I
B
= 0
- 40
- 100
V
V
I
CEO
Collector Cut-off Current
: KSH30
: KSH30C
V
CE
= - 40V, I
B
= 0
V
CE
= - 60V, I
B
= 0
- 50
- 50
μ
A
μ
A
I
CES
Collector Cut-off Current
: KSH30
: KSH30C
V
CE
= - 40V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 0.2A
V
CE
= - 4V, I
C
= - 1A
I
C
= - 1A, I
B
= - 125mA
V
CE
= - 4A, I
C
= - 1A
V
CE
= - 10V, I
C
= - 200mA
- 20
- 20
- 1
μ
A
μ
A
mA
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
40
15
75
- 0.7
- 1.3
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
V
V
3
MHz
KSH30/30C
General Purpose Amplifier
Low Speed Switching Applications
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP30 and TIP30C
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
相關PDF資料 |
PDF描述 |
|---|---|
| KSH30C | General Purpose Amplifier Low Speed Switching Applications |
| KSH31 | General Purpose Amplifier Low Speed Switching Applications |
| KSH31C | General Purpose Amplifier Low Speed Switching Applications |
| KSH32 | General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications |
| KSH32C | General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KSH3055 | 制造商:Samsung Semiconductor 功能描述: |
| KSH3055I | 功能描述:開關晶體管 - 偏壓電阻器 DISC BY MFG 2/02 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| KSH3055-I | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications |
| KSH3055ITU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSH3055TF | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。