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參數資料
| 型號： | KST93 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High Voltage Transistor |
| 中文描述： | 500 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 46K |
| 代理商： | KST93 |
2003 Fairchild Semiconductor Corporation
Rev. B2, January 2003
K
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Refer to KSP92/93 for graphs
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
: KST92
: KST93
BV
CEO
* Collector-Emitter Breakdown Voltage
: KST92
: KST93
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
: KST92
: KST93
I
EBO
Emitter Cut-off Current
h
FE
* DC Current Gain
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
Units
Collector Base Voltage
: KST92
: KST93
-300
-200
V
V
V
CEO
Collector-Emitter Voltage
: KST92
: KST93
-300
-200
-5
-500
350
150
357
V
V
V
V
EBO
I
C
P
C
T
STG
R
TH
(j-a)
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Thermal Resistance junction to Ambient
mA
mW
°
C
°
C/W
Test Condition
I
C
= -100
μ
A, I
E
=0
Min.
Max.
Units
-300
-200
V
V
I
C
= -1mA, I
B
=0
-300
-200
-5
V
V
V
I
E
= -100
μ
A, I
C
=0
V
CB
= -200V, I
E
=0
V
CB
= -160V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
I
C
= -20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
-0.25
-0.25
-0.1
μ
A
μ
A
μ
A
25
40
25
V
CE
(sat)
V
BE
(sat)
C
ob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
-0.5
-0.9
V
V
: KST92
: KST93
V
CB
= -20V, I
E
=0
f=1MHz
V
CE
= -20V, I
C
= -10mA
f=100MHz
6
8
pF
pF
MHz
f
T
Current Gain Bandwidth Product
50
KST92/93
High Voltage Transistor
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
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