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參數資料
| 型號： | KTA1381 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR (HIGH-DIFFINITION CRT DISPLAY VIDEO OUTPUT) |
| 中文描述： | 外延平面PNP晶體管（高DIFFINITION CRT顯示器視頻輸出） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 398K |
| 代理商： | KTA1381 |
2003. 7. 24
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1381
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
HIGH-DEFINITION CRT DISPLAY,
VIDEO OUTPUT APPLICATIONS.
FEATURES
High breakdown voltage : V
CEO
Small reverse transfer capacitance and
excellent high frequency characteristic.
: C
re
=2.3pF (V
CB
=30V, f=1MHz)
Complementary KTC3503.
300V.
MAXIMUM RATING (Ta=25
)
TO-126
H
J
MILLIMETERS
8.3 MAX
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
5.8
0.7
Φ
3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
15.50 0.5
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
Classification O:60
120, Y:100
200
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-100
mA
Pulse
I
CP
-200
Collector Power
Dissipation
Ta=25
P
C
1.5
W
Tc=25
7
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-200V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=-10V, I
C
=-10mA
60
-
200
Transition Frequency
f
T
V
CE
=-30V, I
C
=-10mA
-
150
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-30V, I
E
=0, f=1MHz
-
3.1
-
pF
Reverse Transfer Capacitance
C
re
V
CB
=-30V, I
E
=0, f=1MHz
-
2.3
-
pF
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-20mA, I
B
=-2mA
-
-
-0.6
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-20mA, I
B
=-2mA
-
-
-1.0
V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A, I
E
=0
-300
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-300
-
-
V
Base-Emitter Breakdown Voltage
V
(BR)EBO
I
E
=-10 A, I
C
=0
-5
-
-
V
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