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參數資料
型號: KTA1718L
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)
中文描述: 外延平面PNP晶體管(功率放大器,功率開關)
文件頁數: 1/3頁
文件大?。?/td> 413K
代理商: KTA1718L
2003. 3. 27
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1718D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
FEATURES
Low Collector Saturation Voltage
: V
CE(sat)
=-0.5V(Max.) (I
C
=-1A)
High Speed Switching Time : t
stg
=1 S(Typ.)
Complementary to KTC2815D/L.
MAXIMUM RATING (Ta=25
)
DPAK
DIM
A
B
C
D
E
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
+
+
+
+
+
F
H
I
J
K
L
M
O
P
Q
0.50 0.10
0.91 0.10
0.90 0.1
1.00 0.10
0.95 MAX
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
+
+
+
+
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(1) Classification O:70~140, Y:120~240.
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
2.0 0.2
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
L
P
Q
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
+
+
+
+
+
+
+
+
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-2
A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(1) (Note)
h
FE
2
V
CE(sat)
V
BE(sat)
f
T
C
ob
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-10mA, I
B
=0
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-1.5A
I
C
=-1A, I
B
=-0.05A
I
C
=-1A, I
B
=-0.05A
V
CE
=-2V, I
C
=-0.5A
V
CB
=-10V, I
E
=0, f=1MHz
MIN.
-
-
-50
70
40
-
-
-
-
TYP. MAX. UNIT
-
-0.1
-
-0.1
-
-
-
240
-
-
-
-0.5
-
-1.2
100
-
30
-
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
A
A
V
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
V
MHz
pF
Switching
Time
Turn On Time
t
on
-
0.1
-
S
Storage Time
t
stg
-
1.0
-
Fall Time
t
f
-
0.1
-
I
B1
3
B1
I
V =-30V
I
B2
I
B2
20
μ
s
-I =I =0.05A
DUTY CYCLE
1%
OUTPUT
INPUT
<
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