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參數資料
| 型號： | KTA511T |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR |
| 中文描述： | 外延平面PNP晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 86K |
| 代理商： | KTA511T |
2002. 1. 24
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA511T
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(2)=25(Min.) at V
CE
=-6V, I
C
=-400mA.
Complementary to KTC611T.
MAXIMUM RATING (Ta=25
)
DIM
A
MILLIMETERS
2.9 0.2
+
B
D
E
F
G
H
I
J
K
L
TSV
1.6+0.2/-0.1
+
+
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9+
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
C
A
F
G
G
D
B
E
C
L
H
J
J
I
2
3
1
5
4
+
1. Q BASE
2. Q , Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. Q COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(1) Classification 0:70
140, Y:120
240
h
FE
(2) Classification 0:25Min., Y:40Min.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-35V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
DC Current Gain
h
FE
(1) (Note)
V
CE
=-1V, I
C
=-100mA
70
-
240
h
FE
(2) (Note)
V
CE
=-6V, I
C
=-400mA
25
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-100mA, I
B
=-10mA
-
-0.1
-0.25
V
Base-Emitter Voltage
V
BE
V
CE
=-1V, I
C
=-100mA
-
-0.8
-1.0
V
Transition Frequency
f
T
V
CE
=-6V, I
C
=-20mA
-
200
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-6V, I
E
=0, f=1MHz
-
13
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-500
mA
Emitter Current
I
E
500
mA
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
* Package mounted on a ceramic board (600
0.8
)
EQUIVALENT CIRCUIT(TOP VIEW)
5
1
2
3
4
Q1
Q2
h Rank
Type Name
Marking
Lot No.
S
1
2
3
5
4
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