欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: KTC2815L
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)
中文描述: 外延平面NPN晶體管(功率放大器,功率開關)
文件頁數: 1/3頁
文件大小: 405K
代理商: KTC2815L
2003. 3. 27
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC2815D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
FEATURES
Low Collector Saturation Voltage
: V
CE(sat)
=0.5V(Max.) (I
C
=1A)
High Speed Switching Time : t
stg
=1 S(Typ.)
Complementary to KTA1718D/L.
MAXIMUM RATING (Ta=25
)
DPAK
DIM
A
B
C
D
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
+
+
+
F
H
I
J
K
L
M
O
P
Q
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
+
+
+
+
+
0.50 0.10
0.91 0.10
0.90 0.1
1.00 0.10
0.95 MAX
E
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
+
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(1) Classification O:70~140, Y:120~240.
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
2.0 0.2
+
+
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
L
P
Q
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
+
+
+
+
+
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
2
A
Emitter Current
I
E
-2
A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(1) (Note)
h
FE
2
V
CE(sat)
V
BE(sat)
f
T
C
ob
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=1.5A
I
C
=1A, I
B
=0.05A
I
C
=1A, I
B
=0.05A
V
CE
=2V, I
C
=0.5A
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
50
70
40
-
-
-
-
TYP. MAX. UNIT
-
0.1
-
0.1
-
-
-
240
-
-
-
0.5
-
1.2
100
-
30
-
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
A
A
V
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
V
MHz
pF
Switching
Time
Turn On Time
t
on
I
B1
3
B1
I
V =30V
I
B2
I
B2
20
μ
sec
I =-I =-0.05A
DUTY CYCLE
1%
OUTPUT
INPUT
<
-
0.1
-
S
Storage Time
t
stg
-
1.0
-
Fall Time
t
f
-
0.1
-
相關PDF資料
PDF描述
KTC2874 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(FOR MUTING AND SWITCHING)
KTC2875 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(FOR MUTING AND SWITCHING)
KTC2983D EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)
KTC2983L EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE)
KTC3072D EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT CAMERA STROBO)
相關代理商/技術參數
參數描述
KTC2825D 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR
KTC2874 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE
KTC2874_03 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE
KTC2875 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR
KTC2875_09 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR
主站蜘蛛池模板: 黑龙江省| 中西区| 房产| 横山县| 汽车| 沙河市| 陈巴尔虎旗| 马关县| 谢通门县| 汉川市| 临江市| 荥经县| 将乐县| 大厂| 池州市| 钦州市| 襄汾县| 万载县| 封开县| 鲁甸县| 和林格尔县| 玉屏| 常熟市| 太和县| 商河县| 永安市| 阿拉善右旗| 琼海市| 乌恰县| 陵川县| 山阳县| 三穗县| 贞丰县| 洱源县| 垫江县| 宁阳县| 偏关县| 修文县| 大石桥市| 惠水县| 佛教|