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參數(shù)資料
| 型號： | KTC3266 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING) |
| 中文描述： | 外延平面NPN晶體管（功率放大器，功率開關） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 73K |
| 代理商： | KTC3266 |
2000. 11. 30
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC3266
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
FEATURES
Low Saturation Voltage.
: V
CE(sat)
=0.5V(Max.) at I
C
=2A
Complementary to KTA1296.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
A
B
C
D
E
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
G
H
J
K
L
M
N
D
1 2
3
B
A
J
K
G
H
F
F
L
C
E
C
M
N
1. EMITTER
2. COLLECTOR
3. BASE
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
20
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
2
A
Base Current
I
B
0.5
A
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=6V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(1) (Note)
V
CE
=2V, I
C
=0.1A
120
-
400
h
FE
(2)
V
CE
=2V, I
C
=2A
75
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=2A, I
B
=0.1A
-
-
0.5
V
Base-Emitter Voltage
V
BE
V
CE
=2V, I
C
=0.1A
-
-
0.85
V
Transition Frequency
f
T
V
CE
=2V, I
C
=0.5A
-
120
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
30
-
pF
Note : h
FE
(1) Classification Y:120
240, GR:200
400
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