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參數(shù)資料
| 型號： | KTC3770S |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (VHF/UHF WIDE BAND AMPLIFIER) |
| 中文描述： | 外延平面NPN晶體管（甚高頻/超高頻寬帶放大器） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 438K |
| 代理商： | KTC3770S |
2003. 2. 12
1/5
SEMICONDUCTOR
TECHNICAL DATA
KTC3770S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S
21e
|
2
=11dB (f=1GHz).
MAXIMUM RATING (Ta=25
)
DIM
A
B
MILLIMETERS
2.93+
1.30+0.20/-0.15
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
C
D
E
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note 1 : h
FE
Classification A:50~100, B:80~160, C:125~250.
Note 2 : C
re
is measured by 3 terminal method with capacitance bridge.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
20
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
3
V
Collector Current
I
C
100
mA
Collector Power Dissipation
P
C
150
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=10V, I
E
=0
-
-
1
A
Emitter Cut-off Current
I
EBO
V
EB
=1V, I
C
=0
-
-
1
A
DC Current Gain
h
FE
(Note1)
V
CE
=10V, I
C
=20mA
50
-
250
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz (Note2)
-
-
1.0
pF
Reverse Transfer Capacitance
C
re
-
0.65
1.15
pF
Transition Frequency
f
T
V
CE
=10V, I
C
=20mA
5
7
-
GHz
Insertion Gain
|S
21e
|
2
V
CE
=10V, I
C
=20mA, f=1GHz
7.5
11.5
-
dB
Noise Figure
NF
V
CE
=10V, I
C
=7mA, f=1GHz
-
1.1
2
dB
h Rank
Type Name
Marking
Lot No.
R
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| KTC3770S_0309 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SOT-23 PACKAGE |
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| KTC3770U_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:USM PACKAGE |
| KTC3770UL | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION |
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