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參數資料
| 型號： | KTC3880S-SOT-23 |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | TRANSISTOR (NPN) |
| 中文描述： | 晶體管（NPN）的 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 41K |
| 代理商： | KTC3880S-SOT-23 |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
KTC3880S
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM:
150 mW (Tamb=25
℃
)
Collector current
I
CM:
20 mA
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS( Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
100
μA, I
E
=0
40
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
1
mA, I
B
=0
30
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
100
μA, I
C
=0
4
V
Collector cut-off current
I
CBO
V
CB
=
18
V, I
E
=0
0.5
μA
Emitter cut-off current
I
EBO
V
EB
=
4
V, I
C
=0
0.5
μA
DC current gain
h
FE(1)
V
CE
=
6
V, I
C
=
1
mA
40
200
Transition frequency
f
T
V
CE
=
6
V, I
C
=
1
mA
500
MHz
Collector output capacitance
C
ob
V
CB
=
6
V, I
E
=0, f=
1
MHz
1
pF
Noise figure
NF
V
CE
=
6
V, I
c
=
1
mA, f=
100M
HZ
5
dB
CLASSIFICATION OF h
FE(1)
Rank
R
O
Y
Range
40-80
70-140
100-200
Marking
AQR
AQO
AQY
Unit: mm
SOT-23
1.
BASE
2.
EMITTER
3.
COLLECTOR
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