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參數資料
| 型號： | KTC4527F |
| 廠商： | KEC Holdings |
| 英文描述： | TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA) |
| 中文描述： | 三重擴散NPN晶體管（高電壓和高RELLABILITY高速開關，級SOA） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 86K |
| 代理商： | KTC4527F |
2001. 4. 9
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC4527F
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 0
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
D
E
F
MILLIMETERS
10.30 MAX
15.30 MAX
2.70
0.30
0.85 MAX
3.20
0.20
3.00
0.30
12.30 MAX
0.75 MAX
13.60
0.50
3.90 MAX
1.20
1.30
2.54
4.50
0.20
6.80
2.60
0.20
10
25
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
G
H
J
K
L
M
N
O
P
Q
R
S
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
V
T
0.5
5
2.60
0.15
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25
)
Note : h
FE
(1) Classification R:15
30, O:20
40
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=800V, I
E
=0
-
-
10
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
10
A
Collector-Emitter Sustaning Voltage
V
CEX(SUS)
I
C
=1.5A, I
B1
=-I
B2
=0.3A
L=2mH, Clamped
800
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=1.5A, I
B
=0.3A
-
-
2
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=1.5A, I
B
=0.3A
-
-
1.5
V
DC Current Gain
h
FE
(1)(Note)
V
CE
=5V, I
C
=0.2A
15
-
40
h
FE
(2)
V
CE
=5V, I
C
=1A
8
-
-
Collector-Base Breakdown Voltage
BV
CBO
I
C
=1mA, I
E
=0
1100
-
-
V
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=5mA, R
BE
=
800
-
-
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=1mA, I
C
=0
7
-
-
V
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
-
60
-
pF
Transition Frequency
f
T
V
CE
=10V, I
C
=0.2A
-
15
-
MHz
Switching
Time
Turn On Time
t
on
I
B1
200
B1
I
V =400V
I
B2
I
B2
20
μ
S
I =0.4A , I =-0.8A
DUTY CYCLE
1%
OUTPUT
INPUT
<
-
-
0.5
S
Storage Time
t
stg
-
-
3
Fall Time
t
f
-
-
0.3
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
1100
V
Collector-Emitter Voltage
V
CEO
800
V
Emitter-Base Voltage
V
EBO
7
V
Collector Current
DC
I
C
3
A
Pulse
I
CP
10
Base Current
I
B
1.5
A
Collector Power Dissipation
(Tc=25
)
P
C
40
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
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