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參數資料
| 型號： | KTD2854 |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (MICRI MOTOR DRIVE, HAMMER DRIVE, SWITCHING POWER AMPLIFIER) |
| 中文描述： | 外延平面NPN晶體管（MICRI電機驅動，錘子驅動，開關功率放大器） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 88K |
| 代理商： | KTD2854 |
2001. 10. 23
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD2854
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATION.
FEATURES
High DC Current Gain
: h
FE
=2000(Min.) (V
CE
=2V, I
C
=1A)
Low Saturation Voltage
: V
CE(sat)
=1.5V(Max.) (I
C
=1A, I
B
=1mA)
Complementary to KTB2234.
MAXIMUM RATINGS (Ta=25
)
DIM
A
B
C
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
D
E
F
G
H
J
K
L
M
N
1. EMITTER
2. COLLECTOR
3. BASE
P
Q
R
S
TO-92L
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
25
1.25
Φ
1.50
0.10 MAX
12.50 0.50
1.00
O
DEPTH:0.2
1
2
3
B
A
C
Q
K
F
F
M
M
N
N
O
H
L
J
D
G
P
H
H
E
D
H
R
S
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
8
V
Collector Current
DC
I
C
2
A
Pulse
I
CP
3
Base Current
I
B
0.5
A
Collector Power Dissipation
P
C
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=80V, I
E
=0
-
-
10
A
Emitter Cut-off Current
I
EBO
V
EB
=8V, I
C
=0
-
-
4
mA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
100
-
-
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=1A(Pulse)
2000
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=1A, I
B
=1mA(Pulse)
-
-
1.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=1A, I
B
=1mA(Pulse)
-
-
2.0
V
Transition Frequency
f
T
V
CE
=2V, I
C
=0.5A
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
20
-
pF
Switching
Time
Turn On Time
t
on
I
B1
3
B1
I
V =30V
I
B2
I
B2
20
μ
s
I =-I =1mA
DUTY CYCLE
1%
OUTPUT
INPUT
<
-
0.4
-
S
Storage Time
t
stg
-
4.0
-
Fall Time
t
f
-
0.6
-
COLLECTOR
BASE
EMITTER
4k
800
EQUIVALENT CIRCUIT
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