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參數(shù)資料
| 型號： | KTX512T |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE |
| 中文描述： | 外延平面PNP晶體管肖特基型二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 108K |
| 代理商： | KTX512T |
2002. 1. 24
1/5
SEMICONDUCTOR
TECHNICAL DATA
KTX512T
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
DC/DC CONVERTER APPLICATIONS.
FEATURES
Composite type with a PNP transistor and a Schottky barrier diode
contained in one package facilitating high-density mounting.
The KTX512T is formed with two chips, one being equivalent to
the KTA1535T and the other the KDR411S, encapsulated in one packages.
Ultrasmall package facilitates miniaturization in end products
(mounting height 0.7
).
DIM
A
B
C
MILLIMETERS
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
+
D
E
TS6
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
F
G
H
I
J
K
L
A
F
G
G
D
K
K
B
E
C
L
H
J
J
I
2
3
5
1
6
4
+
+
+
+
1. Q EMITTER
2. Q BASE
3. D ANODE
4. Q , D COMMON (COLLECTOR, CATHODE)
5. Q , D COMMON (COLLECTOR, CATHODE)
6. Q , D COMMON (COLLECTOR, CATHODE)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-3
A
Pulse
I
CP
-5
A
Base Current
I
B
600
mA
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
* Package mounted on a ceramic board (600
0.8
)
1
2
3
6
5
4
Q1
D1
EQUIVALENT CIRCUIT (TOP VIEW)
Type Name
Marking
Lot No.
D B
1
2
3
6
5
4
MAXIMUM RATING (Ta=25
)
Transistor Q
1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Peak Reverse Voltage
V
RRM
40
V
DC Reverse Voltage
V
R
20
V
Average Output Current
I
D
0.5
A
Peak Forward Surge Current
I
FSM
3
A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-40
125
Diode (SBD) D
1
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