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參數資料
| 型號： | L2SD2114KWLT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Epitaxial planar type NPN silicon transistor |
| 中文描述： | 外延型NPN硅平面晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 83K |
| 代理商： | L2SD2114KWLT1G |
LESHAN RADIO COMPANY, LTD.
L2SD2114K*LT1–1/4
Epitaxial planar type
NPN silicon transistor
z
Features
1) HighDCcurrent gain.
h
FE
=1200(Typ.)
2) Highemitter-base voltage.
V
EBO
=12V(Min.)
3) LowV
CE(sat).
V
CE (sat)
= 0.18V(Typ.)
(I
C
/ I
B
= 500mA/ 20mA)
4) Pb-Free package is available.
1
3
2
SOT– 23 (TO–236AB)
L
2SD2114K*LT1
1
BASE
2
EMITTER
COLLECTOR
3
z
Absolute maximum ratings
(Ta=25
°
C)
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
25
V
V
V
A(DC)
W
°
C
°
C
20
12
0.5
A(Pulse)
1
0.2
150
55
～+
150
Symbol
Limits
Unit
Single pulse Pw
=
100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
z
Electricalcharacteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
Min.
25
20
12
0.18
350
8.0
0.5
0.5
0.4
V
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
20V
V
EB
=
10V
I
C
/I
B
=
500mA/20mA
V
CE
=
10V, I
E
=
50mA, f
=
100MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
μ
A
μ
A
h
FE
820
2700
V
CE
=
3V, I
C
=
10mA
V
MHz
pF
Ron
0.8
I
B
=
1mA, Vi
=
100mV(rms), f
=
1kHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Output On-resistance
Measured using pulse current
h
FE
Values Classification, Device Marking and Ordering Information
Device
h
FE
Marking
Shipping
L2SD2114KVLT1
820~1800
BV
3000/Tape&Reel
L2SD2114KVLT1G
820~1800
BV
(Pb-Free)
3000/Tape&Reel
L2SD2114KWLT1
1200~2700
BW
3000/Tape&Reel
L2SD2114KWLT1G
1200~2700
BW
(Pb-Free)
3000/Tape&Reel
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