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參數(shù)資料
| 型號： | L6332 |
| 廠商： | 意法半導體 |
| 英文描述： | 6 / 4 CHANNEL VOLTAGE SENSE GMR PREAMPLIFIER |
| 中文描述： | 6 / 4通道的電壓檢測巨磁電阻前置 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | L6332 |
1/4
L6327
L6332
February 2001
This is preliminary information on a new product now in development. Details are subject to change without notice.
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Power Supplies +5Vdc, -5Vdc
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Current bias or voltage bias (selectable) /
Differential Voltage Sense architecture
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6 or 4 channel versions
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38-pin TSSOP package (for either 6 or 4
channels)
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Internal reference Resistor for read and write
currents
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Read channel -3dB bandwidth > 400MHz
(Rmr=50 ohm no interconnect)
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Input equivalent preamplifier voltage noise
0.5nV/rtHz nominal
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Input equivalent MR bias current noise 10 pA/
rtHz nominal
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MR bias current programmable (5 bit DAC) 1.5-
7.0mA nominal MR bias voltage programmable
(5 bit DAC) 65-335mV nominal
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Programmable gain (100V/V, 150, 200 and
250V/V) and read bandwidth
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Write frequency up to 300 MHz (Lh=70nH,
Rh=20 ohms, Ch=2pF, VEE=-5V)
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Rise/Fall time 0.6ns ( Iw =40mA 0-pk, Lh=70nH,
Rh=20 ohms, Ch=2pF, VEE=-5V)
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Write current programmable (5 bit DAC) 15-60mA
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PECL write data input
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Bi-directional 16-bit TTL Serial interface for
head selection, read/write currents selection,
chip parameters modification, chip enable,
vendor code and fault status read back registers
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2-pin mode selection (R/W, MRR)
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Bank write feature for servo write
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Digital buffered head voltage DBHV / Analog
buffered head voltage ABHV pin (gain 5)
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Thermal asperity detection & correction with
adjustable sensitivity level (6 bit DAC)
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Automatic successive approximation digital
measurement of temperature and Rmr (7 bits)
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Read and write head open/short detection, low
low supply detect and temperature monitoring
(high temperature warning and Analog
Temperature Diode Voltage measurement)
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Low write frequency detection.
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WRITE to READ fast recovery 150ns (same
head, including 100ns blanking period)
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Head-to-head switch in READ mode - 10
μ
s (nom)
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Head and MR bias current switching transient
current head protection
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READ-to-WRITE switching 50ns (same head)
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Programmable read bias during write and bank
write operation
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ESD diode for GMR head protection
DESCRIPTION
L6327/L6332 is a BICMOS monolithic integrated cir-
cuit GMR differential preamplifier designed for use
with four-terminal magneto-resistive GMR read/in-
ductive write heads. It is available as either a six
(L6327) or four (L6332) channel device. The devices
consist of a voltage-sense, current-bias or voltage-
bias (selectable), differential input and differential
output, low-noise, high bandwidth read amplifier and
include fast current switching write drivers which sup-
port data rates in excess of 550 Mb/s with 70nH write
heads.
The GMR preamplifier provides programmable read
current / voltage bias and write current (5 bit DAC for
the read bias, 5 bit DAC for the write current), fault
detection circuitry and servo writing features. Read
amplifier gain, write current wave shape (overshoot,
undershoot and damping) can be adjusted and a
thermal asperity detection and correction circuit can
be enabled and programmed with different thresh-
olds (6 bit DAC) through a 16-bit bi-directional serial
interface (SDEN, SDATA, SCLK). The device oper-
ates from a +5V supply and a -5V supply (nominal).
No external components are required as a trimmed
or untrimmed resistor for reference current setting is
employed.
TSSOP38
ORDERING NUMBERS: L6327
L6332
PRODUCT PREVIEW
6 / 4 CHANNEL VOLTAGE SENSE GMR PREAMPLIFIER
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