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參數資料
| 型號： | L8050QLT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors NPN Silicon |
| 中文描述： | 通用晶體管NPN硅 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 50K |
| 代理商： | L8050QLT1 |
LESHAN RADIO COMPANY, LTD.
L8050*LT1–1/3
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CBO
V
EBO
I
C
Max
25
40
5
800
Unit
V
V
V
mAdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-continuoun
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
P
D
T
A
=25°C
225
mW
Derate above 25°C
1.8
mW/°C
Thermal Resistance,Junction to Ambient
R
θ
J A
556
°C/W
Total Device Dissipation
P
D
Alumina Substrate,(2) TA=25°C
300
mW
Derate above 25°C
2.4
mW/°C
Thermal Resistance,Junction to Ambient
R
θ
J A
417
°C/W
Junction and Storage Temperature
T
j,
T
S
t
g
-55 to +150
°C
L8050*LT1
1
3
2
SOT–23
1
BASE
2
EMITTER
COLLECTOR
3
FEATURE
High current capacity in compact package.
I
C
= 0.8A.
Epitaxial planar type.
PNP complement: L8550
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
L8050PLT1
80P
L8050PLT1G
80P
(Pb-Free)
L8050QLT1
1YC
L8050QLT1G
1YC
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
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| L8550HQLT1 | General Purpose Transistors NPN Silicon |
| L8550HQLT1G | General Purpose Transistors NPN Silicon |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| L8050QLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
| L8050QLT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon Epitaxial planar type. |
| L8050RLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon Epitaxial planar type. |
| L8050SLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon Epitaxial planar type. |
| L8050SLT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon Epitaxial planar type. |
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