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參數(shù)資料
| 型號(hào)： | LB1816 |
| 元件分類： | 消費(fèi)家電 |
| 英文描述： | SPECIALTY CONSUMER CIRCUIT, PDIP28 |
| 封裝： | 0.500 INCH, DIP-28 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 98K |
| 代理商： | LB1816 |
LB1816
No.4626-3/8
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Current limiter
Reference voltage
VCS
0.65
0.8
0.95
V
Offset voltage
VCSO
8
30
50
mV
FG amplifier block
Input bias current
IB(FG)
-1
μA
Input offset voltage
VIO(FG)
-10
+10
mV
DC bias level
VB(FG)
-5
0.5VREG
-5%
V
VFGH1
With no external load
VREG-1.0
V
High level output voltage
VFGH2
IFGO= -2mA
VREG-1.5
V
VFGL1
With no external load
1.0
V
Low level output voltage
VFGL2
IFGO=2mA
1.3
V
FG Schmitt block
Input hysteresis (high to low)
VSHL
-120
-60
mV
Input hysteresis (low to high)
VSLH
60
120
mV
Hysteresis width
VFGL
70
120
240
mV
Error amplifier block
Input bias current
IB(ER)
-1
+1
μA
DC bias level
VB(ER)
-5%
0.5VREG
+5%
V
High level output voltage
VERH
With no external load
VREG-1.0
V
Low level output voltage
VERL
With no external load
1.0
V
Phase comparator output
High level output voltage
VPDH
With no external load
VREG-0.4
V
Low level output voltage
VPDL
With no external load
0.4
V
Output source current
IPD+
With no external load
-0.4
mA
Output sink current
IPD-
With no external load
2.5
mA
Lock detector output
Output saturation voltage
VLD(sat)
ILD=10mA
0.4
V
Output leakage current
ILD(leak)
10
μA
Reference signal block
Crystal oscillator frequency
fOSC
Crystal oscillator mode
1
8
MHz
External input frequency
fCLK
External clock mode
500
5000
Hz
High level pin current
IOSCH
VOSC=VOSCL +0.3V
0.5
mA
Low level pin voltage
VOSCL
IOSC= -0.5mA
4.4
V
N1, N2 pins
High level input voltage
VN1, 2H
3.0
VREG+0.5
V
Low level input voltage
VN1, 2L
0
2.0
V
S/B pin
High level input voltage
VSBH
2.4
VREG+0.5
V
Low level input voltage
VSBL
0
1.5
V
Hysteresis width
DVSB
0.25
V
Stop sensor
Set count
SCT
32
Low power supply voltage protection circuit block
Operating voltage
VSD
8.8
V
Hysteresis width
ΔVSD
0.4
V
Thermal protection circuit block
Operating temperature
TTSD
(Internal junction temperature)
Design target*
150
180
°C
Recovery temperature
TTSDR
(Internal junction temperature)
Design target*
140
°C
*: Design target value and no measurement was made.
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