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參數資料
型號: LBAT54LT1
廠商: 樂山無線電股份有限公司
英文描述: Dual Series Schottky Barrier Diodes
中文描述: 雙系列肖特基二極管
文件頁數: 1/3頁
文件大小: 78K
代理商: LBAT54LT1
LESHAN RADIO COMPANY, LTD.
LBAT54LT1-1/3
MAXIMUM RATINGS
(TJ = 125
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
PD
30
Volts
Forward Power Dissipation
@ TA = 25
°
C
Derate above 25
°
C
225
2.0
mW
mW/
°
C
Forward Current (DC)
IF
TJ
Tstg
200 Max
mA
Junction Temperature
125 Max
°
C
Storage Temperature Range
–55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR = 10
μ
A)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
V(BR)R
CT
IR
VF
VF
VF
trr
30
Volts
7.6
10
pF
0.5
2.0
μ
Adc
0.22
0.24
Vdc
0.41
0.5
Vdc
0.52
1.0
Vdc
5.0
ns
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
VF
VF
IF
IFRM
IFSM
0.29
0.32
Vdc
0.35
0.40
Vdc
200
mAdc
Repetitive Peak Forward Current
300
mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s)
600
mAdc
ANODE
1
CATHODE
3
1
3
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
Pb-Free package is available
Barrier Diodes
Dual Series Schottky
SOT-23
2
LBAT54LT1
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBAT54LT1
J
V3
3000/Tape&Reel
LBAT54LT JV3
(Pb-Free)
3000/Tape&Reel
相關PDF資料
PDF描述
LBAT54LT1G Dual Series Schottky Barrier Diodes
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LBAT54SLT1G Dual Serles Schottky Barrler Dlodes
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LBAT54WT1 Schottky Barrier Diodes
相關代理商/技術參數
參數描述
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