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參數資料
| 型號： | LBAV70WT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual Switching Diodes |
| 中文描述： | 雙開關二極管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 91K |
| 代理商： | LBAV70WT1G |
LBAV70WT1-1/4
Dual Switching Diodes
1
3
2
LBAV70WT1
SOT–323 (SC–70)
3
CATHODE
ANODE
1
ANODE
2
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Symbol
V
R
I
F
I
FM(surge)
Max
70
200
500
Unit
Vdc
mAdc
mAdc
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction toAmbient
Total Device Dissipation
Alumina Substrate
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction toAmbient
Junction and Storage Temperature
Symbol
P
D
Max
200
Unit
mW
1.6
0.625
300
mW/°C
°C/W
mW
R
θ
JA
P
D
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
μ
Adc)
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 50 Vdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
=10 mAdc, R
L
= 100
, I
R(REC)
= 1.0 mAdc) (Figure 1)
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns) (Figure 2)
1. FR–5 = 1.0
×
0.75
×
0.062 in.
2.Alumina = 0.4
×
0.3
×
0.024 in. 99.5% alumina.
3.For each individual diode while the seeond diode is unbiased.
Symbol
Min
Max
Unit
V
(BR)
70
—
Vdc
I
R1
I
R2
C
D
—
—
—
5.0
100
1.5
μ
Adc
nAdc
pF
V
F
mVdc
—
—
—
—
—
715
855
1000
1250
6.0
t
rr
ns
V
RF
—
1.75
V
FEATURE
Small plastic SMD package.
For high-speed switching applications.
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBAV70WT1
A4
3000/Tape&Reel
LBAV70WT1G
A4
(Pb-Free)
3000/Tape&Reel
LESHAN RADIO COMPANY, LTD.
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