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參數(shù)資料
型號(hào): LBC848CDW1T1
廠商: 樂(lè)山無(wú)線電股份有限公司
英文描述: Dual General Purpose Transistors NPN Duals
中文描述: 雙通用晶體管npn型偶
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 174K
代理商: LBC848CDW1T1
LESHAN RADIO COMPANY, LTD.
LBC846b–1/5
1
3
2
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Symbol
BC846
BC847
BC848
Unit
Collector–Emitter Voltage
V
CEO
65
45
30
V
Collector–Base Voltage
V
CBO
80
50
30
V
Emitter–Base Voltage
V
EBO
6.0
6.0
5.0
V
Collector Current
-
Continuous
I
C
100
100
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
Symbol
P
D
Max
380
250
Unit
mW
mW
3.0
328
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
ORDERING INFORMATION
Device
LBC846BDW1T1
LBC847BDW1T1
LBC847CDW1T1
LBC848BDW1T1
LBC848CDW1T1
Package
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Shipping
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
LBC846BDW1T1
LBC847BDW1T1
LBC847CDW1T1
LBC848BDW1T1
LBC848CDW1T1
SOT
-
363 /SC
-
88
1
3
2
6
4
5
See Table
Q
1
Q
2
6
4
5
相關(guān)PDF資料
PDF描述
LBC846BPDW1T1 Dual General Purpose Transistors NPN/PNP Duals (Complimentary)
LBC847BPDW1T1 Dual General Purpose Transistors NPN/PNP Duals (Complimentary)
LBC847CPDW1T1 Dual General Purpose Transistors NPN/PNP Duals (Complimentary)
LBC848BPDW1T1 Dual General Purpose Transistors NPN/PNP Duals (Complimentary)
LBC848CPDW1T1 Dual General Purpose Transistors NPN/PNP Duals (Complimentary)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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