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參數資料
| 型號： | LBC850CLT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors NPN Silicon |
| 中文描述： | 通用晶體管NPN硅 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 141K |
| 代理商： | LBC850CLT1G |
LESHAN RADIO COMPANY, LTD.
LBC846ALT1S-1/6
General Purpose Transistors
3
xx
MARKING DIAGRAM
xx= Device Marking
(See Table Below)
LBC846ALT1
Series
NPN Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating
– Machine Model: >400 V
Pb-Free Packages are Available
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2
EMITTER
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
L
BC846
L
BC847,
L
BC850
L
BC848,
L
BC849
VCEO
65
45
30
Vdc
Collector–Base Voltage
L
BC846
L
BC847,
L
BC850
L
BC848,
L
BC849
VCBO
80
50
30
Vdc
Emitter–Base Voltage
L
BC846
L
BC847,
L
BC850
L
BC848,
L
BC849
VEBO
6.0
6.0
5.0
Vdc
Collector Current – Continuous
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient (Note 1.)
RJA
556
°
C/W
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25
°
C
Derate above 25
°
C
PD
300
2.4
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient (Note 2.)
RJA
417
°
C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to
+150
°
C
1
3
2
SOT–23
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