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參數資料
型號: LBC856BLT1G
廠商: 樂山無線電股份有限公司
英文描述: General Purpose Transistors PNP Silicon
中文描述: 通用硅晶體管進步黨
文件頁數: 1/7頁
文件大?。?/td> 153K
代理商: LBC856BLT1G
LESHAN RADIO COMPANY, LTD.
LBC856ALT1S-1/7
General Purpose Transistors
1
3
2
SOT–23
2
EMITTER
3
COLLECTOR
1
BASE
3
xx
MARKING DIAGRAM
xx= Device Marking
(See Table Below)
LBC856ALT1
Series
PNP Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating
– Machine Model: >400 V
Pb-Free Packages are Available
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
LBC856
LBC857
LBC858, LBC859
VCEO
–65
–45
–30
V
Collector-Base Voltage
LBC856
LBC857
LBC858, LBC859
VCBO
–80
–50
–30
V
Emitter–Base Voltage
VEBO
IC
–5.0
V
Collector Current – Continuous
–100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
RJA
556
°
C/W
Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25
°
C
Derate above 25
°
C
PD
300
2.4
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
RJA
417
°
C/W
Junction and Storage Temperature
TJ, Tstg
–55 to
+150
°
C
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
相關PDF資料
PDF描述
LBC857 General Purpose Transistors PNP Silicon
LBC857ALT1 General Purpose Transistors PNP Silicon
LBC857ALT1G General Purpose Transistors PNP Silicon
LBC857BLT1 General Purpose Transistors PNP Silicon
LBC857BLT1G General Purpose Transistors PNP Silicon
相關代理商/技術參數
參數描述
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LBC857 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon
LBC857ALT1 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon
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