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參數資料
| 型號： | LBC858ALT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進步黨 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 153K |
| 代理商： | LBC858ALT1G |
LESHAN RADIO COMPANY, LTD.
LBC856ALT1S-1/7
General Purpose Transistors
1
3
2
SOT–23
2
EMITTER
3
COLLECTOR
1
BASE
3
xx
MARKING DIAGRAM
xx= Device Marking
(See Table Below)
LBC856ALT1
Series
PNP Silicon
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: >4000 V
ESD Rating
– Machine Model: >400 V
Pb-Free Packages are Available
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
LBC856
LBC857
LBC858, LBC859
VCEO
–65
–45
–30
V
Collector-Base Voltage
LBC856
LBC857
LBC858, LBC859
VCBO
–80
–50
–30
V
Emitter–Base Voltage
VEBO
IC
–5.0
V
Collector Current – Continuous
–100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
RJA
556
°
C/W
Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25
°
C
Derate above 25
°
C
PD
300
2.4
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
RJA
417
°
C/W
Junction and Storage Temperature
TJ, Tstg
–55 to
+150
°
C
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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