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參數資料
| 型號： | LBR110 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | GREEN, LEADLESS, PLASTIC, LBR, 4 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 146K |
| 代理商： | LBR110 |
LBR106 thru LBR110
LEADLESS SURFACE MOUNT
BRIDGE RECTIFIER
REVERSE VOLTAGE – 600 to 1000 Volts
FORWARD CURRENT – 1.0 Ampere
FEATURES
Low profile package – 1.00mm
Low power loss & high efficiency
High current capability
MECHANICAL DATA
Case: Packed with FRP substrate and epoxy underfilled
Case Material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. Cl.)
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Lead Free Plating, solder per J-STD-002 and
JESD22-B102
Component in accordance to RoHs 2002/95/EC
ESD performance
- 4000V human body model (JESD22-A114)
-400V machine model (JESD22-A115)
LBR
Dim.
Min.
Max.
A
5.20
5.40
B
4.10
4.30
C
5.70
5.90
D
1.00
1.20
E
0.85
0.95
F
0.86
1.16
All dimensions in
millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
PARAMETER
SYMBOL
LBR106
LBR108
LBR110
UNIT
Device marking code
Note
106
108
110
---
Maximum Repetitive Peak Reverse Voltage
VRRM
600
800
1000
V
Maximum RMS Voltage
VRMS
420
560
700
V
Maximum DC Blocking Voltage
VDC
600
800
1000
V
Average Rectified Output Current
@TA=55°C
I(AV)
1.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave
IFSM
30
A
Operating junction temperature range
TJ
-55 to +175
°C
Storage temperature range
TSTG
-55 to +175
°C
PARAMETER
TEST CONDITIONS
SYMBOL
Max.
UNIT
Forward Voltage (1)
IF=1.0A
Tj=25°C
VF
1.0
V
Leakage Current (1)
VR=VDC
Tj=25°C
Tj=125°C
IR
5.0
500
uA
THERMAL CHARACTERISTIC
SYMBOL
Typical
UNIT
Typical junction capacitance (2)
CJ
25
pF
Typical thermal resistance _ Junction to Case (3)
RΘJC
50
°C/W
Typical thermal resistance _ Junction to Ambient (3)
RΘJA
100
°C/W
Typical thermal resistance _ Junction to Lead (3)
RΘJL
15
°C/W
Note :
REV. 1, Sep-2010, KBDB03
(1)
300us Pulse width, 2% Duty cycle.
(2)
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
(3)
Thermal Resistance test performed in accordance with JESD-51. Unit mounted on PC board with 5.0mm
2 (0.03mm thick) land areas.
RΘJL is measured at the lead of cathode band,
RΘJC is measured at the top centre of body.
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| LBR2012T100KV | 功能描述:10μH Unshielded Wirewound Inductor 150mA 360 mOhm 0805 (2012 Metric) 制造商:taiyo yuden 系列:LB 包裝:剪切帶（CT） 零件狀態:有效 類型:繞線 材料 - 磁芯:- 電感:10μH 容差:±10% 額定電流:150mA 電流 - 飽和值:- 屏蔽:無屏蔽 DC 電阻（DCR）:360 毫歐 不同頻率時的 Q 值:- 頻率 - 自諧振:32MHz 等級:AEC-Q200 工作溫度:-40°C ~ 105°C 頻率 - 測試:2.52MHz 安裝類型:表面貼裝 封裝/外殼:0805（2012 公制） 大小/尺寸:0.079" 長 x 0.049" 寬（2.00mm x 1.25mm） 高度 - 安裝（最大值）:0.057"（1.45mm） 標準包裝:1 |
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