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參數資料
| 型號： | LBSS84LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Power MOSFET 130m Amps, 50 Volts (P-Channel SOT -23) |
| 中文描述： | 功率MOSFET 130米安培，50伏特（P溝道采用SOT -23） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 182K |
| 代理商： | LBSS84LT1 |
LESHAN RADIO COMPANY, LTD.
LBSS84LT1 –1/4
LBSS84LT1
1
SOT –23
2
3
Power MOSFET
130 mAmps, 50 Volts
P–Channel SOT–23
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dc–dc converters, load
switching, power management in portable and battery–powered
products such as computers, printers, cellular and cordless telephones.
Energy Efficient
Miniature SOT–23 Surface Mount Package Saves Board Space
Symbol
Value
Unit
Drain–to–Source Voltage
V
DSS
50
V
dc
Gate–to–Source Voltage – Continuous
V
GS
±
20
V
dc
Drain Current
– Continuous @ T
A
= 25
°
C
– Pulsed Drain Current (t
p
≤
10
μ
s)
I
D
I
DM
130
520
mA
Total Power Dissipation @ T
A
= 25
°
C
P
D
225
mW
Operating and Storage Temperature
Range
T
J
, T
stg
– 55 to
150
°
C
Thermal Resistance – Junction–to–Ambient
R
θ
JA
T
L
556
°
C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
260
°
C
Rating
MAXIMUM RATINGS
(T
J
= 25 C unless otherwise noted)
Device
Package
Shipping
ORDERING INFORMATION
L
BSS84LT
SOT–23
3000 Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
3 Drain
1
Gate
2
Source
-
Marking Diagram
PD
W
W = Work Week
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