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參數(shù)資料
| 型號(hào)： | LC3564QS-70 |
| 英文描述： | x8 SRAM |
| 中文描述： | x8的SRAM |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 145K |
| 代理商： | LC3564QS-70 |
Overview
The LC3564B, LC3564BS, LC3564BM, and LC3564BT
are 8192-word
×
8-bit asynchronous silicon gate CMOS
SRAMs. These are full CMOS type SRAMs that adopt a
six-transistor memory cell and feature fast access times,
low operating power dissipation, and an ultralow standby
current. These SRAMs provide three control signal inputs:
an OE input for high-speed memory access, and two chip
enable lines, CE1 and CE2, for low power mode and
device selection. These means that these SRAMs area
ideal for systems that require low power and battery
backup, and that they support easy memory expansion.
The ultralow standby current that is a feature of these
SRAMs allows them to be used with capacitor backup as
well. Since these SRAMs support 3-V operation, they are
also appropriate for use in portable battery operated
systems.
Features
Supply voltage range:
— In 5-V operation mode: 5.0 V ±10%
— In 3-V operation mode: 3.0 V ±10%
Address access time (t
AA
)
— In 5-V operation mode:
LC3564B, BS, BM, and BT-70: 70 ns (max)
LC3564B, BS, BM, and BT-10: 100 ns (max)
— In 3-V operation mode:
LC3564B, BS, BM, and BT-70:200 ns (max)
LC3564B, BS, BM, and BT-10:500 ns (max)
Ultralow standby current
— In 5-V operation mode: 1.0 μA (Ta
≤
70°C),
2.7 to 5.5 V
3.0 μA (Ta
≤
85°C)
— In 3-V operation mode: 0.8 μA (Ta
≤
70°C),
2.5 μA (Ta
≤
85°C)
Operating temperature range
— In 5-V operation mode: –40 to 85°C
— In 3-V operation mode: –40 to 85°C
Data retention supply voltage: 2.0 to 5.5 V
All input and output levels:
— In 5-V operation mode: TTL compatible levels
— In 3-V operation mode: V
CC
–0.2 V/0.2 V
Three control inputs: OE, CE1, and CE2
Shared input and output pins, three-state outputs
No clock required
Packages
28-pin DIP (600 mil) plastic package: LC3564B
28-pin DIP (300 mil) plastic package: LC3564BS
28-pin SOP (450 mil) plastic package: LC3564BM
28-pin TSOP (8
×
13.4 mm) plastic package: LC3564BT
Package Dimensions
unit: mm
3012A-DIP28 (600 mil)
unit: mm
3133-DIP28 (300 mil)
CMOS IC
53098HA (OT) No. 5804-1/9
SANYO: DIP28 (600 mil)
[LC3564B]
SANYO: DIP28 (300 mil)
[LC3564BS]
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
64K (8192-word
×
8-bit) SRAM with OE, CE1, and CE2
Control Pins
LC3564B, BS, BM, BT-70/10
Ordering number : EN5804A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LC3564QS-85 | x8 SRAM |
| LC3564RM-10LV | x8 SRAM |
| LC3564S-85 | |
| LC3564SM-70 | x8 SRAM |
| LC3564SM-85 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LC3564QS-85 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 SRAM |
| LC3564RM | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:64K (8192 words x 8 bits) SRAM |
| LC3564RM-10LV | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 SRAM |
| LC3564RM-12LV | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述: |
| LC3564RM-15LV | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 SRAM |
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