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參數資料
| 型號： | LET21008 |
| 廠商： | 意法半導體 |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| 中文描述： | 塑料包裝內的射頻功率晶體管的LDMOS增強技術 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 40K |
| 代理商： | LET21008 |
1/4
TARGET DATA
April, 15 2003
LET21008
RF POWER TRANSISTORS
L
dmos
E
nhanced
T
echnology in Plastic Package
Designed for GSM / EDGE / IS-97 / WCDMA
applications
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 8 W with 11 dB gain @ 2170 MHz / 26V
NEW LEADLESS PLASTIC PACKAGE
ESD PROTECTION
DESCRIPTION
The LET21008 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2.1 GHz. LET21008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the innovative leadless
SMD
plastic
package,
LET21008’s superior linearity performance makes
it an ideal solution for base station applica-
tions.
PowerFLAT.
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
-0.5 to +15
V
2.0
A
TBD
W
150
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
TBD
°
C/W
ORDER CODE
LET21008
BRANDING
21008
PowerFLAT
(5x5)
PIN CONNECTION
TOP VIEW
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相關代理商/技術參數 |
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|---|---|
| LET21030C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET8180 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET9002 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET9006 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET9045 | 功能描述:射頻MOSFET電源晶體管 RF PWR Trans LdmoST N-Ch 28V 1GHz ESD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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