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參數資料
| 型號： | LET9085 |
| 廠商： | 意法半導體 |
| 英文描述： | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| 中文描述： | RF功率晶體管LDMOS的增強技術 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 35K |
| 代理商： | LET9085 |
1/4
TARGET DATA
January, 28 2003
LET9085
RF POWER TRANSISTORS
L
dmos
E
nhanced
T
echnology
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
IS-95 CDMA PERFORMANCES
P
OUT
=
20 W
EFF. = 28 %
EDGE PERFORMANCES
P
OUT
=
35 W
EFF. = 35 %
GSM PERFORMANCES
P
OUT
=
75 W
EFF. = 55 %
EXCELLENT THERMAL STABILITY
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
ESD PROTECTION
DESCRIPTION
The
LET9085
is a common source N-Channel en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The
LET9085
is designed for high gain and
broadband performance operating in common
source mode at 26 V. Its internal matching makes
it ideal for base station applications requiring high
linearity.
PIN CONNECTION
1. Drain
2. Source
3. Gate
1
2
3
M265
epoxy sealed
ORDER CODE
LET9085
BRANDING
LET9085
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
-0.5 to +15
V
12
A
186
W
200
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
0.7
°
C/W
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PDF描述 |
|---|---|
| LET9130 | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LF120 | Very Low Drop Voltage Regulator with Inhabit(帶禁止的低壓差電壓穩壓器) |
| LF00AB | Very Low Drop Voltage Regulator with Inhabit(帶禁止的低壓差電壓穩壓器) |
| LF33 | Very Low Drop Voltage Regulator with Inhabit(帶禁止的低壓差電壓穩壓器) |
| LF35 | Very Low Drop Voltage Regulator with Inhabit(帶禁止的低壓差電壓穩壓器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LET9120 | 功能描述:射頻MOSFET電源晶體管 RF Power LdmoST 120W 18 dB 860MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET9130 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET9150 | 功能描述:射頻MOSFET電源晶體管 RF Power LdmoST 150W 20 dB 860MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET9180 | 制造商:STMicroelectronics 功能描述:POWER R.F. - Boxed Product (Development Kits) 制造商:STMicroelectronics 功能描述:RF POWER TRANSISTOR LDMOS |
| LETBQ6WM | 制造商:OSRAM 功能描述: |
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