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參數資料
| 型號： | LF111 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | Voltage Comparators |
| 中文描述： | 電壓比較器 |
| 文件頁數： | 2/11頁 |
| 文件大小： | 219K |
| 代理商： | LF111 |
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
(Note 8)
LF111/LF211
LF311
Total Supply Voltage (V
84
)
Output to Negative Supply
Voltage (V
74
)
Ground to Negative Supply
Voltage (V
14
)
Differential Input Voltage
36V
36V
50V
40V
30V
30V
g
30V
g
15V
500 mW
g
30V
g
15V
500 mW
Input Voltage (Note 1)
Power Dissipation (Note 2)
Output Short Circuit Duration
10 seconds
10 seconds
LF111/LF211
LF311
Operating Temp.
Range
LF111
LF211
LF311
b
55
§
C to
a
125
§
C
b
25
§
C to
a
85
§
C
0
§
C to
a
70
§
C
Storage Temp.
Range
b
65
§
C to
a
150
§
C
b
65
§
C to
a
150
§
C
Lead Temp.
(Soldering,
10 seconds)
260
§
C
260
§
C
ESD rating to be determined.
Electrical Characteristics
(LF111/LF211) (Note 3)
Parameter
Conditions
Min
Typ
Max
Units
Input Offset Voltage (Note 4)
T
A
e
25
§
C, R
S
s
50k
T
A
e
25
§
C, V
CM
e
0 (Note 6)
T
A
e
25
§
C, V
CM
e
0 (Note 6)
T
A
e
25
§
C
T
A
e
25
§
C
V
IN
s
b
5.0 mV, I
OUT
e
50 mA, T
A
e
25
§
C
T
A
e
25
§
C
V
IN
s
5.0 mV, V
OUT
e
35V, T
A
e
25
§
C
0.7
4.0
mV
Input Offset Current (Note 4)
5.0
25
pA
Input Bias Current
20
50
pA
Voltage Gain
40
200
V/mV
Response Time (Note 5)
200
ns
Saturation Voltage
0.75
1.5
V
Strobe On Current
3.0
mA
Output Leakage Current
0.2
10
nA
Input Offset Voltage (Note 4)
R
S
s
50k
6.0
mV
Input Offset Current (Note 4)
V
S
e
g
15V, V
CM
e
0 (Note 6)
2.0
3.0
nA
Input Bias Current
V
S
e
g
15V, V
CM
e
0 (Note 6)
5.0
7.0
nA
Input Voltage Range
b
13.5
g
14
13.0
V
Saturation Voltage
V
a
t
4.5V, V
b
e
0
V
IN
s
b
6.0 mV, I
OUT
s
8.0 mA
0.23
0.4
V
Output Leakage Current
V
IN
t
5.0 mV, V
OUT
e
35V
T
A
e
25
§
C
T
A
e
25
§
C
0.1
0.5
m
A
Positive Supply Current
5.1
6.0
mA
Negative Supply Current
4.1
5.0
mA
Note 1:
This rating applies for
g
15V supplies. The positive input voltage limit is 30V above the negative supply. The negative input voltage limit is equal to the
negative supply voltage or 30V below the positive supply, whichever is less.
Note 2:
The maximum junction temperature of the LF111 is
a
150
§
C, the LF211 is
a
110
§
C and the LF311 is
a
85
§
C. For operating at elevated temperatures,
devices in the H08 package must be derated based on a thermal resistance of
a
65
§
C/W junction to ambient (in 400 linear feet/min air flow),
a
165
§
C/W junction
to ambient (in static air), or
a
20
§
C/W junction to case.
Note 3:
These specifications apply for V
S
e
g
15V, and the Ground pin at ground, and
b
55
§
C
s
T
A
s
a
125
§
C for the LF111, unless otherwise stated. With the
LF211, however, all temperature specifications are limited to
b
25
§
C
s
T
A
sg
85
§
C and for the LF311 0
§
C
s
T
A
s
a
70
§
C. The offset voltage, offset current and bias
current specifications apply for any supply voltage from a single 5.0V supply up to
g
15V supplies.
Note 4:
The offset voltages and offset currents given are the maximum values required to drive the output within a volt of either supply with a 1.0 mA load. Thus,
these parameters define an error band and take into account the worst case effects of voltage gain and input impedance.
Note 5:
The response time specified (see definitions) is for a 100 mV input step with 5.0 mV overdrive.
Note 6:
For input voltages greater than 15V above the negative supply the bias and offset currents will increaseDsee typical performance curves.
Note 7:
This specification gives the current that must be drawn from the strobe pin to ensure the output is properly disabled. Do not short the strobe pin to ground;
it should be current driven at 3 to 5 mA.
Note 8:
Refer to RETSF111X for LF111H military specifications.
2
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