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參數資料
| 型號： | LF412ACN |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運算放大器 |
| 英文描述： | Low Offset, Low Drift Dual JFET Input Operational Amplifier |
| 中文描述： | DUAL OP-AMP, 1000 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDIP8 |
| 封裝： | DIP-8 |
| 文件頁數： | 4/13頁 |
| 文件大小： | 565K |
| 代理商： | LF412ACN |
AC Electrical Characteristics
(Continued)
(Note 7)
Symbol
Parameter
Conditions
LF412A
Typ
≤
0.02
LF412
Typ
≤
0.02
Units
Min
Max
Min
Max
THD
Total Harmonic Dist
A
V
=+10, R
L
=10k,
V
O
=20 Vp-p,
BW=20 Hz-20 kHz
T
A
=25C, R
S
=100
,
f=1 kHz
T
A
=25C, f=1 kHz
%
e
n
Equivalent Input Noise
Voltage
Equivalent Input Noise
Current
25
25
i
n
0.01
0.01
Note 3:
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4:
Any of the amplifier outputs can be shorted to ground indefintely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 5:
For operating at elevated temperature, these devices must be derated based on a thermal resistance of
θ
jA
.
Note 6:
These devices are available in both the commercial temperature range 0C
≤
T
A
≤
70C and the military temperature range 55C
≤
T
A
≤
125C. The
temperature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an “M”
indicates the military temperature range. The military temperature range is available in “H” package only. In all cases the maximum operating temperature is limited
by internal junction temperature T
j
max.
Note 7:
Unless otherwise specified, the specifications apply over the full temperature range and for V
S
=
±
20V for the LF412A and for V
S
=
±
15V for the LF412. V
OS
,
I
B
, and I
OS
are measured at V
CM
=0.
Note 8:
The LF412A is 100% tested to this specification. The LF412 is sample tested on a per amplifier basis to insure at least 85% of the amplifiers meet this
specification.
Note 9:
The input bias currents are junction leakage currents which approximately double for every 10C increase in the junction temperature, T
. Due to limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P
. T
j
=T
A
+
θ
jA
P
D
where
θ
jA
is the thermal resistance from junction to ambient. Use of a heat sink is
recommended if input bias current is to be kept to a minimum.
Note 10:
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. V
S
=
±
6V to
±
15V.
Note 11:
Refer to RETS412X for LF412MH and LF412MJ military specifications.
Note 12:
Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate
outside guaranteed limits.
Note 13:
Human body model, 1.5 k
in series with 100 pF.
Typical Performance Characteristics
Input Bias Current
Input Bias Current
00565610
00565611
L
www.national.com
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PDF描述 |
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| LF412AMH | Low Offset, Low Drift Dual JFET Input Operational Amplifier |
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| LF412CN | Low Offset, Low Drift Dual JFET Input Operational Amplifier |
| LF412MH | Low Offset, Low Drift Dual JFET Input Operational Amplifier |
| LF412CN8 | Dual Precision JFET Input Operational Amplifiers |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LF412ACN/A+ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Voltage-Feedback Operational Amplifier |
| LF412ACN/B+ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Voltage-Feedback Operational Amplifier |
| LF412ACN/NOPB | 功能描述:運算放大器 - 運放 LOW OFFSET,LOW DRIFT DUAL JFET INP OP AMP RoHS:否 制造商:STMicroelectronics 通道數量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LF412ACN/NOPB | 制造商:Texas Instruments 功能描述:Operational Amplifier (Op-Amp) IC |
| LF412ACN8 | 功能描述:IC PREC OP-AMP DUAL JFET 8-DIP RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標準包裝:1 系列:- 放大器類型:通用 電路數:4 輸出類型:滿擺幅 轉換速率:0.6 V/µs 增益帶寬積:1MHz -3db帶寬:- 電流 - 輸入偏壓:2pA 電壓 - 輸入偏移:1000µV 電流 - 電源:85µA 電流 - 輸出 / 通道:20mA 電壓 - 電源，單路/雙路(±):1.8 V ~ 6 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:14-SOICN 包裝:剪切帶 (CT) 產品目錄頁面:680 (CN2011-ZH PDF) 其它名稱:MCP6L04T-E/SLCT |
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