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參數(shù)資料
| 型號： | LH28F800BGN-TL12 |
| 英文描述： | x16 Flash EEPROM |
| 中文描述： | x16閃存EEPROM |
| 文件頁數(shù)： | 1/56頁 |
| 文件大小： | 373K |
| 代理商： | LH28F800BGN-TL12 |
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LH28F160S5-L/S5H-L
DESCRIPTION
The LH28F160S5-L/S5H-L flash memories with
Smart 5 technology are high-density, low-cost,
nonvolatile, read/write storage solution for a wide
range of applications, having high programming
performance is achieved through highly-optimized
page buffer operations. Their symmetrically-blocked
architecture, flexible voltage and enhanced cycling
capability provide for highly flexible component
suitable for resident flash arrays, SIMMs and
memory
cards.
Their
capabilities provide for an ideal solution for code +
data storage applications. For secure code storage
applications, such as networking, where code is
either directly executed out of flash or downloaded
to DRAM, the LH28F160S5-L/S5H-L offer three
levels of protection : absolute protection with V
PP
at
GND, selective hardware block locking, or flexible
software block locking. These alternatives give
designers ultimate control of their code security
needs. The LH28F160S5-L/S5H-L are conformed
to the flash Scalable Command Set (SCS) and the
Common Flash Interface (CFI) specification which
enable universal and upgradable interface, enable
the highest system/device data transfer rates and
minimize device and system-level implementation
costs.
enhanced
suspend
FEATURES
Smart 5 technology
– 5 V V
CC
– 5 V V
PP
High speed write performance
– Two 32-byte page buffers
– 2 μs/byte write transfer rate
Common Flash Interface (CFI)
– Universal & upgradable interface
Scalable Command Set (SCS)
High performance read access time
LH28F160S5-L70
– 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)
LH28F160S5H-L70
– 70 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)
LH28F160S5-L10/S5H-L10
– 100 ns (5.0±0.5 V)
Enhanced automated suspend options
– Write suspend to read
– Block erase suspend to write
– Block erase suspend to read
Enhanced data protection features
– Absolute protection with V
PP
= GND
– Flexible block locking
– Erase/write lockout during power transitions
SRAM-compatible write interface
User-configurable x8 or x16 operation
High-density symmetrically-blocked architecture
– Thirty-two 64 k-byte erasable blocks
Enhanced cycling capability
– 100 000 block erase cycles
– 3.2 million block erase cycles/chip
Low power management
– Deep power-down mode
– Automatic power saving mode decreases I
CC
in static mode
Automated write and erase
– Command user interface
– Status register
ETOX
TM
V nonvolatile flash technology
Packages
– 56-pin TSOP Type I (TSOP056-P-1420)
Normal bend/Reverse bend
– 56-pin SSOP (SSOP056-P-0600)
#
[LH28F160S5-L]
– 64-ball CSP (FBGA064-P-0811)
– 64-pin SDIP (SDIP064-P-0750)
#
ETOX is a trademark of Intel Corporation.
#
Under development
LH28F160S5-L/S5H-L
16 M-bit (2 MB x 8/1 MB x 16) Smart 5
Flash Memories (Fast Programming)
- 1 -
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
相關PDF資料 |
PDF描述 |
|---|---|
| LH28F800BGN-TL85 | x16 Flash EEPROM |
| LH28F800BVHE-BV85 | x8/x16 Flash EEPROM |
| LH28F800SGB-L10 | x16 Flash EEPROM |
| LH28F800SGB-L100 | x16 Flash EEPROM |
| LH28F800SGB-L70 | x16 Flash EEPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F800BGN-TL85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Flash EEPROM |
| LH28F800BGRBL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-BL12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGRBL85 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
| LH28F800BGR-BL85 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:8 M-bit (512 kB x 16) SmartVoltage Flash Memories |
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