- 您現在的位置：買賣IC網 > PDF目錄377642 > LK822 (Polyfet RF Devices) SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR PDF資料下載
參數資料
| 型號： | LK822 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
| 中文描述： | 硅柵增強型射頻功率LDMOS晶體管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 35K |
| 代理商： | LK822 |
polyfet rf devices
LK822
12
Push - Pull
AK
48.0
4.0
66.0
1.10 C/W
36
2.0
15.00
2.0
55
0.40
6.00
14.0
140
0.20
36
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Source
Voltage
Gate to
Source
Voltage
-65 C to 150 C
200 C
A
V
Load Mismatch Tolerance
VSWR
Drain to
Gate
Voltage
20:1
Relative
1.60
0.20
Ids =
mA, Vgs = 0V
V, Vgs = 0V
Ciss
Crss
Coss
Vds =
Idq =
A, Vds = V, F =
1.60
Bvdss
Idss
Drain Breakdown Voltage
V
mA
pF
pF
pF
Common Source Output Capacitance
Common Source Feedback Capacitance
Idq =
Idq = 1.60
400
Vgs = 20V, Ids =
Rdson
Saturation Resistance
Forward Transconductance
gM
Vds = 10V, Vgs = 5V
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
400
400
Common Source Input Capacitance
36
V
20
Igss
Vgs
Idsat
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Saturation Current
1
7
uA
V
Mho
Ohm
Amp
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
RF CHARACTERISTICS (
40.0
ABSOLUTE MAXIMUM RATINGS ( T =
Gps
A, Vds = V, F =
A, Vds = V, F =
Watts
V
1
MHz
MHz
MHz
Watts
Package Style
40.0
Vds = 0V Vgs = 30V
Vgs = 20V, Vds = 10V
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
12.5
Vds =
A, Vgs = Vds
Ids =
A
η
dB
%
o
o
o
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER
TRANSISTOR
LDMOS
Vgs = 0V, F = 1 MHz
12.5
Vds =
Vgs = 0V, F = 1 MHz
12.5
Vds =
Vgs = 0V, F = 1 MHz
12.5
REVISION 03/08/2001
25 C )
WATTS OUTPUT )
相關PDF資料 |
PDF描述 |
|---|---|
| LL101A-GS08 | Diode Small Signal Schottky 60V 0.03A 2-Pin Mini-MELF SOD-80 T/R |
| LL101C-GS08 | Diode Small Signal Schottky 40V 0.03A 2-Pin Mini-MELF SOD-80 T/R |
| LL101B-GS08 | LL101A, LL101B, LL101C Small Signal Schottky Diodes |
| LL101B-GS18 | SCHOTTKY DIODES SOD80 MINIMELF-E2 - Tape and Reel |
| LL101C-GS18 | Diode Small Signal Schottky 40V 0.03A 2-Pin Mini-MELF SOD-80 T/R |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LK-832-1 | 制造商:PennEngineering (PEM) 功能描述: |
| LK-832-2 | 制造商:PennEngineering (PEM) 功能描述: |
| LK-9 | 制造商:Mac8 功能描述: 制造商:Shinagawa Shoko 功能描述: |
| LK907E | 制造商:Brady Corporation 功能描述:PRINZING BASIC LOCKOUT KIT OPTION #1 |
| LK-A50-21C-1 | 制造商:ITT Interconnect Solutions 功能描述:LK-A50-21C-1 - Bulk |
發布緊急采購，3分鐘左右您將得到回復。