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參數資料
型號: LM113
廠商: National Semiconductor Corporation
英文描述: CAP FILM MKT .033UF 100VDC 10%
中文描述: 參考二極管
文件頁數: 1/4頁
文件大小: 126K
代理商: LM113
TL/H/5713
L
December 1994
LM113/LM313 Reference Diode
General Description
The LM113/LM313 are temperature compensated, low volt-
age reference diodes. They feature extremely-tight regula-
tion over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature
stability.
The diodes are synthesized using transistors and resistors
in a monolithic integrated circuit. As such, they have the
same low noise and long term stability as modern IC op
amps. Further, output voltage of the reference depends only
on highly-predictable properties of components in the IC; so
they can be manufactured and supplied to tight tolerances.
Features
Y
Low breakdown voltage: 1.220V
Y
Dynamic impedance of 0.3
X
from 500
m
A to 20 mA
Y
Temperature stability typically 1% over
b
55
§
C to 125
§
C
range (LM113), 0
§
C to 70
§
C (LM313)
Y
Tight tolerance:
g
5%,
g
2% or
g
1%
The characteristics of this reference recommend it for use in
bias-regulation circuitry, in low-voltage power supplies or in
battery powered equipment. The fact that the breakdown
voltage is equal to a physical property of siliconDthe ener-
gy-band gap voltageDmakes it useful for many tempera-
ture-compensation and temperature-measurement func-
tions.
Schematic and Connection Diagrams
Metal Can Package
Order Number
LM113H, LM113H/883,
LM113-1H, LM113-1H/883,
LM113-2H, LM113-2H/883,
or LM313H
See NS Package Number H02A
TL/H/5713–1
Typical Applications
Level Detector for Photodiode
Low Voltage Regulator
2
Solid tantalum.
TL/H/5713–2
C
1995 National Semiconductor Corporation
RRD-B30M115/Printed in U. S. A.
相關PDF資料
PDF描述
LM113-1H CAP FILM MKT .33UF 100VDC 10%
LM113-2H CAP FILM MKT .039UF 100VDC 10%
LM113H Reference Diode
LM313H Reference Diode
LM3146 LM3146 High Voltage Transistor Array
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