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參數(shù)資料
| 型號(hào)： | LM1596H |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 消費(fèi)家電 |
| 英文描述： | Balanced Modulator-Demodulator |
| 中文描述： | SPECIALTY CONSUMER CIRCUIT, MBCY10 |
| 封裝： | METAL CAN, TO-5, 10 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 164K |
| 代理商： | LM1596H |
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Internal Power Dissipation (Note 1)
500 mW
Applied Voltage (Note 2)
Differential Input Signal (V
7
b
V
8
)
Differential Input Signal (V
4
b
V
1
)
Input Signal (V
2
b
V
1
, V
3
b
V
4
)
Bias Current (I
5
)
Operating Temperature Range LM1596
30V
g
5.0V
g
(5
a
I
5
R
0
)V
5.0V
12 mA
b
55
§
C to
a
125
§
C
0
§
C to
a
70
§
C
b
65
§
C to
a
150
§
C
LM1496
Storage Temperature Range
Soldering Information
#
Dual-In-Line Package
Soldering (10 seconds)
#
Small Outline Package
Vapor Phase (60 seconds)
260
§
C
215
§
C
220
§
C
Infrared (15 seconds)
See AN-450 ‘‘Surface Mounting Methods and their effects
on Product Reliability’’ for other methods of soldering sur-
face mount devices.
Electrical Characteristics
(T
A
e
25
§
C, unless otherwise specified, see test circuit)
Parameter
Conditions
LM1596
LM1496
Units
Min
Typ
Max Min
Typ
Max
Carrier Feedthrough
V
C
e
60 mVrms sine wave
f
C
e
1.0 kHz, offset adjusted
V
C
e
60 mVrms sine wave
f
C
e
10 kHz, offset adjusted
V
C
e
300 mV
pp
square wave
f
C
e
1.0 kHz, offset adjusted
V
C
e
300 mV
pp
square wave
f
C
e
1.0 kHz, not offset adjusted
f
S
e
10 kHz, 300 mVrms
f
C
e
500 kHz, 60 mVrms sine wave offset adjusted
f
S
e
10 kHz, 300 mVrms
f
C
e
10 MHz, 60 mVrms sine wave offset adjusted
R
L
e
50
X
Carrier Input Port, V
C
e
60 mVrms sine wave
f
S
e
1.0 kHz, 300 mVrms sine wave
Signal Input Port, V
S
e
300 mVrms sine wave
V
7
b
V
8
e
0.5Vdc
V
S
e
100 mVrms, f
e
1.0 kHz
V
7
b
V
8
e
0.5 Vdc
f
e
5.0 MHz
V
7
b
V
8
e
0.5 Vdc
f
e
5.0 MHz
V
7
b
V
8
e
0.5 Vdc
40
40
m
Vrms
140
140
m
Vrms
0.04
0.2
0.04
0.2
mVrms
20
100
20
150
mVrms
Carrier Suppression
50
65
50
65
dB
50
50
dB
Transadmittance Bandwidth
300
300
MHz
80
80
MHz
Voltage Gain, Signal Channel
2.5
3.5
2.5
3.5
V/V
Input Resistance, Signal Port
200
200
k
X
Input Capacitance, Signal Port
2.0
2.0
pF
Single Ended Output Resistance f
e
10 MHz
40
40
k
X
Single Ended Output
Capacitance
f
e
10 MHz
5.0
5.0
pF
Input Bias Current
(I
1
a
I
4
)/2
(I
7
a
I
8
)/2
(I
1
b
I
4
)
(I
7
b
I
8
)
(
b
55
§
C
k
T
A
k
a
125
§
C)
(0
§
C
k
T
A
k
a
70
§
C)
12
25
12
30
m
A
Input Bias Current
12
25
12
30
m
A
Input Offset Current
0.7
5.0
0.7
5.0
m
A
Input Offset Current
0.7
5.0
5.0
5.0
m
A
Average Temperature
Coefficient of Input
Offset Current
2.0
nA/
§
C
nA/
§
C
2.0
Output Offset Current
(I
6
b
I
9
)
(
b
55
§
C
k
T
A
k
a
125
§
C)
(0
§
C
k
T
A
k
a
70
§
C)
14
50
14
60
m
A
Average Temperature
Coefficient of Output
Offset Current
90
nA/
§
C
nA/
§
C
90
2
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