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參數資料
| 型號： | LM3045 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | LM3045/LM3046/LM3086 Transistor Arrays |
| 中文描述： | LM3045/LM3046/LM3086晶體管陣列 |
| 文件頁數： | 3/6頁 |
| 文件大小： | 179K |
| 代理商： | LM3045 |
Electrical Characteristics
(Continued)
Parameter
Conditions
Min
Typ
Max
Units
Low Frequency Noise Figure (NF)
f
e
1 kHz, V
CE
e
3V,
I
C
e
100
m
A, R
S
e
1 k
X
3.25
dB
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (h
fe
)
f
e
1 kHz, V
CE
e
3V,
I
C
e
1 mA
110 (LM3045, LM3046)
(LM3086)
Short Circuit Input Impednace (h
ie
)
3.5
k
X
Open Circuit Output Impedance (h
oe
)
15.6
m
mho
Open Circuit Reverse Voltage Transfer Ratio (h
re
)
1.8 x 10
b
4
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Y
fe
)
f
e
1 MHz, V
CE
e
3V,
I
C
e
1 mA
31
b
j 1.5
Input Admittance (Y
ie
)
0.3
a
J 0.04
Output Admittance (Y
oe
)
0.001
a
j 0.03
Reverse Transfer Admittance (Y
re
)
See Curve
Gain Bandwidth Product (f
T
)
V
CE
e
3V, I
C
e
3 mA
V
EB
e
3V, I
E
e
0
V
CB
e
3V, I
C
e
0
V
CS
e
3V, I
C
e
0
300
550
Emitter to Base Capacitance (C
EB
)
0.6
pF
Collector to Base Capacitance (C
CB
)
0.58
pF
Collector to Substrate Capacitance (C
CI
)
2.8
pF
Typical Performance Characteristics
Temperature for Each
Transistor
Cutoff Current vs Ambient
Typical Collector To Base
Temperature for Each
Transistor
Cutoff Current vs Ambient
Typical Collector To Emitter
Beta Ratio for Transistors Q
1
and Q
2
vs Emitter Current
Current-Transfer Ratio and
Typical Static Forward
TL/H/7950–2
Q
1
Q
2
vs Collector Current
for Matched Transistor Pair
Typical Input Offset Current
Offset Voltage for Differential
Pair and Paired Isolated
Voltage Characteristic and Input
Typical Static Base To Emitter
Transistors vs Emitter Current
TL/H/7950–3
3
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PDF描述 |
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| LM3045J | CAP 6.3V 1000UF SOLID ELECT AXL |
| LM3089 | LM3089 FM Receiver IF System |
| LM3089N | LM3089 FM Receiver IF System |
| LM309 | 5-Volt Regulator |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| LM3045 WAF | 制造商:Texas Instruments 功能描述: |
| LM3045J | 制造商:Texas Instruments 功能描述: |
| LM3045J/833B | 制造商:National Semiconductor Corporation 功能描述: 制造商:Texas Instruments 功能描述: |
| LM3046 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:LM3045/LM3046/LM3086 Transistor Arrays |
| LM3046M | 功能描述:達林頓晶體管 Transistor Array RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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