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參數(shù)資料
| 型號(hào)： | LM3086N |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | LM3045/LM3046/LM3086 Transistor Arrays |
| 中文描述： | 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 179K |
| 代理商： | LM3086N |
Electrical Characteristics
(Continued)
Parameter
Conditions
Min
Typ
Max
Units
Low Frequency Noise Figure (NF)
f
e
1 kHz, V
CE
e
3V,
I
C
e
100
m
A, R
S
e
1 k
X
3.25
dB
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (h
fe
)
f
e
1 kHz, V
CE
e
3V,
I
C
e
1 mA
110 (LM3045, LM3046)
(LM3086)
Short Circuit Input Impednace (h
ie
)
3.5
k
X
Open Circuit Output Impedance (h
oe
)
15.6
m
mho
Open Circuit Reverse Voltage Transfer Ratio (h
re
)
1.8 x 10
b
4
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Y
fe
)
f
e
1 MHz, V
CE
e
3V,
I
C
e
1 mA
31
b
j 1.5
Input Admittance (Y
ie
)
0.3
a
J 0.04
Output Admittance (Y
oe
)
0.001
a
j 0.03
Reverse Transfer Admittance (Y
re
)
See Curve
Gain Bandwidth Product (f
T
)
V
CE
e
3V, I
C
e
3 mA
V
EB
e
3V, I
E
e
0
V
CB
e
3V, I
C
e
0
V
CS
e
3V, I
C
e
0
300
550
Emitter to Base Capacitance (C
EB
)
0.6
pF
Collector to Base Capacitance (C
CB
)
0.58
pF
Collector to Substrate Capacitance (C
CI
)
2.8
pF
Typical Performance Characteristics
Temperature for Each
Transistor
Cutoff Current vs Ambient
Typical Collector To Base
Temperature for Each
Transistor
Cutoff Current vs Ambient
Typical Collector To Emitter
Beta Ratio for Transistors Q
1
and Q
2
vs Emitter Current
Current-Transfer Ratio and
Typical Static Forward
TL/H/7950–2
Q
1
Q
2
vs Collector Current
for Matched Transistor Pair
Typical Input Offset Current
Offset Voltage for Differential
Pair and Paired Isolated
Voltage Characteristic and Input
Typical Static Base To Emitter
Transistors vs Emitter Current
TL/H/7950–3
3
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