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參數資料
| 型號： | LM3146 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | LM3146 High Voltage Transistor Array |
| 中文描述： | LM3146高電壓晶體管陣列 |
| 文件頁數： | 3/6頁 |
| 文件大小： | 151K |
| 代理商： | LM3146 |
AC Electrical Characteristics
Symbol
Parameter
Conditions
Limits
Units
Min
Typ
Max
NF
Low Frequency Noise Figure
f
e
1 kHz, V
CE
e
5V,
I
C
e
100
m
A, R
S
e
1 k
X
3.25
dB
f
T
Gain Bandwidth Product
V
CE
e
5V, I
C
e
3 mA
300
500
MHz
C
EB
Emitter to Base Capacitance
V
EB
e
5V, I
E
e
0
0.70
pF
C
CB
Collector to Base Capacitance
V
CB
e
5V, I
C
e
0
0.37
pF
C
CI
Collector to Substrate Capacitance
V
CI
e
5V, I
C
e
0
2.2
pF
Low Frequency, Small Signal Equivalent Circuit Characteristics
h
fe
Forward Current Transfer Ratio
f
e
1 kHz, V
CE
e
3V, I
C
e
1 mA
100
h
ie
Short Circuit Input Impedance
f
e
1 kHz, V
CE
e
3V, I
C
e
1 mA
3.5
k
X
h
oe
Open Circuit Output Impedance
f
e
1 kHz, V
CE
e
3V, I
C
e
1 mA
15.6
m
mho
h
re
Open Circuit Reverse Voltage
Transfer Ratio
f
e
1 kHz, V
CE
e
3V,
I
C
e
1 mA
1.8 x 10
b
4
Admittance Characteristics
Y
fe
Forward Transfer Admittance
f
e
1 MHz, V
CE
e
3V, I
C
e
1 mA
31
b
j 1.5
mmho
Y
ie
Input Admittance
f
e
1 MHz, V
CE
e
3V, I
C
e
1 mA
0.3
a
j 0.04
mmho
Y
oe
Output Admittance
f
e
1 MHz, V
CE
e
3V, I
C
e
1 mA
0.001
a
j 0.03
mmho
Y
re
Reverse Transfer Admittance
f
e
1 MHz, V
CE
e
3V, I
C
e
1 mA
(Note 3)
mmho
Note 1:
The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative
than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors,
the substrate terminal should be maintained at either dc or signal (ac) ground. A suitable bypass capacitor can be used to establish a signal ground.
Note 2:
If the transistors are forced into zener breakdown (V
(BR)EBO
), degradation of forward transfer current ratio (h
FE
) can occur.
Note 3:
See curve.
3
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