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參數資料
| 型號： | LM329AH |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | Precision Reference |
| 中文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 6.9 V, MBCY2 |
| 封裝： | HERMETIC SEALED, METAL CAN, TO-46, 2 PIN |
| 文件頁數： | 3/10頁 |
| 文件大小： | 165K |
| 代理商： | LM329AH |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 3)
Reverse Breakdown Current
Forward Current
30 mA
2 mA
Operating Temperature Range
LM129
LM329
Storage Temperature Range
Soldering Information
TO-92 package: 10 sec.
TO-46 package: 10 sec.
55C to +125C
0C to +70C
55C to +150C
260C
300C
Electrical Characteristics
(Note 2)
LM129A, B, C
LM329A, B, C, D
Parameter
Conditions
Units
Min
Typ
Max
Min
Typ
Max
Reverse Breakdown Voltage
T
A
= 25C,
0.6 mA
≤
I
R
≤
15 mA
T
A
= 25C,
0.6 mA
≤
I
R
≤
15 mA
T
A
= 25C, I
R
= 1 mA
6.7
6.9
7.2
6.6
6.9
7.25
V
Reverse Breakdown Change
with Current (Note 4)
Reverse Dynamic Impedance
(Note 4)
RMS Noise
9
14
1
9
20
2
mV
0.6
0.8
T
A
= 25C,
10 Hz
≤
F
≤
10 kHz
T
A
= 45C
±
0.1C,
I
R
= 1 mA
±
0.3%
I
R
= 1 mA
7
20
7
100
μV
Long Term Stability
(1000 hours)
Temperature Coefficient
LM129A, LM329A
LM129B, LM329B
LM129C, LM329C
LM329D
Change In Reverse Breakdown
Temperature Coefficient
Reverse Breakdown Change
with Current
Reverse Dynamic Impedance
20
20
ppm
6
10
20
50
6
15
30
50
1
10
20
50
100
ppm/C
ppm/C
ppm/C
ppm/C
ppm/C
15
30
1 mA
≤
I
R
≤
15 mA
1
1 mA
≤
I
R
≤
15 mA
12
12
mV
1 mA
≤
I
R
≤
15 mA
0.8
1
Note 1:
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2:
These specifications apply for 55C
≤
T
A
≤
+125C for the LM129 and 0C
≤
T
A
≤
+70C for the LM329 unless otherwise specified. The maximum junction
temperature for an LM129 is 150C and LM329 is 100C. For operating at elevated temperature, devices in TO-46 package must be derated based on a thermal re-
sistance of 440C/W junction to ambient or 80C/W junction to case. For the TO-92 package, the derating is based on 180C/W junction to ambient with 0.4" leads
from a PC board and 160C/W junction to ambient with 0.125" lead length to a PC board.
Note 3:
Refer to RETS129H for LM129 family military specifications.
Note 4:
These changes are tested on a pulsed basis with a low duty-cycle. For changes versus temperature, compute in terms of tempco.
L
www.national.com
3
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| LM329BZ | 功能描述:IC VREF SHUNT BURIED ZNR TO-92-3 RoHS:否 類別:集成電路 (IC) >> PMIC - 電壓基準 系列:- 產品培訓模塊:Voltage Reference Basics 標準包裝:100 系列:- 基準類型:旁路，精度 輸出電壓:4.096V 容差:±0.075% 溫度系數:50ppm/°C 輸入電壓:- 通道數:1 電流 - 陰極:1µA 電流 - 靜態:- 電流 - 輸出:10mA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:管件 |
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