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參數資料
| 型號： | LM494 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | Pulse Width Modulated Control Circuit |
| 中文描述： | 脈寬調制控制電路 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 159K |
| 代理商： | LM494 |
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Storage Temperature Range
Ceramic DIP
Molded DIP
b
65
§
C to
a
175
§
C
b
65
§
C to
a
150
§
C
Operating Temperature Range
Industrial (LM494I)
Commercial (LM494C)
b
40
§
C to
a
85
§
C
0
§
C to
a
70
§
C
Lead Temperature
Ceramic DIP (Soldering, 60 sec.)
Molded DIP (Soldering, 10 sec.)
300
§
C
265
§
C
Internal Power Dissipation (Notes 1, 2)
16L-Ceramic DIP
16L-Molded DIP
1.50W
1.04W
Supply Voltage
42V
Voltage from Any Lead to Ground
(except Lead 8 and Lead 11)
V
CC
a
0.3V
Output Collector Voltage
42V
Peak Collector Current
(I
C1
and I
C2
)
ESD Susceptibility
250 mA
(to be determined)
Recommended Operating
Conditions
Power Supply Voltage (V
CC
)
Voltage on Any Lead
except Leads 8 and 11
(Referenced to Ground) (V
I
)
Output Voltage Collector (V
C1
, V
C2
)
Output Collector Current (I
C1
, I
C2
)
Timing Capacitor (C
T
)
Timing Resistor (R
T
)
Oscillator Frequency (f
OSC
)
7.0V to 40V
b
0.3V to V
CC
a
0.3V
b
0.3V to 40V
200 mA
470 pF to 10
m
F
1.8 k
X
to 500 k
X
1.0 kHz to 300 kHz
LM494
Electrical Characteristics
T
A
e
0
§
C to
a
70
§
C for the LM494C, T
A
e b
40
§
C to
a
85
§
C for the LM494I, V
CC
e
15V, f
OSC
e
10 kHz, unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
REFERENCE SECTION
V
REF
Reference Voltage (Note 3)
I
REF
e
1.0 mA
7.0V
s
V
CC
s
40V
4.75
5.0
5.25
V
Reg
LINE
Line Regulation of
Reference Voltage
2.0
25
mV
TCV
REF
Temperature Coefficient of
Reference Voltage
0
§
C
s
T
A
s
70
§
C
0.01
0.03
%/
§
C
Reg
LOAD
Load Regulation of
Reference Voltage
1.0 mA
s
I
REF
s
10 mA
1.0
15
mV
I
OS
Output Short Circuit Current
V
REF
e
0V
0
§
C
s
T
A
s
a
70
§
C
b
40
§
C
s
T
A
s
a
85
§
C
10
35
50
mA
35
OSCILLATOR SECTION
f
OSC
Oscillator Frequency
(Figure 10)
C
T
e
0.01
m
F,
R
T
e
12 k
X
C
T
e
0.01
m
F,
R
T
e
12 k
X
10
kHz
D
f
OSC
Oscillator Frequency Change
0
§
C
s
T
A
s
a
70
§
C
b
40
§
C
s
T
A
s
a
85
§
C
2.0
%
2.0
DEAD TIME CONTROL SECTION
I
IB (DT)
Input Bias Current
V
CC
e
15V, 0V
s
V
4
s
5.25V
V
CC
e
15V, Lead 4
e
0V,
Output Control
e
V
REF
b
2.0
b
10
m
A
DC
(Max)
Maximum Duty Cycle,
Each Output
45
%
V
TH(in)
Input Threshold Voltage
Zero Duty Cycle
3.0
3.3
V
Maximum Duty Cycle
0
ERROR AMPLIFIER SECTIONS
V
IO
Input Offset Voltage
V
3
e
2.5V
V
3
e
2.5V
V
3
e
2.5V
7.0V
s
V
CC
s
40V
2.0
10
mV
I
IO
Input Offset Current
25
250
nA
I
IB
Input Bias Current
0.2
1.0
m
A
V
ICR
Input Common Mode
Voltage Range
b
0.3
V
CC
V
A
VS
Large Signal Voltage Gain
0.5V
s
V
3
s
3.5V
60
74
dB
BW
Bandwidth
650
kHz
2
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