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參數資料
| 型號： | LM709 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | SL WtW Conn SR WO/MtgE Opt A 24Ckt |
| 中文描述： | 運算放大器 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 180K |
| 代理商： | LM709 |
Absolute Maximum Ratings
(Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage
LM709/LM709A/LM709C
g
18V
Power Dissipation (Note 1)
LM709/LM709A
LM709C
300 mW
250 mW
Differential Input Voltage
LM709/LM709A/LM709C
g
5V
Input Voltage
LM709/LM709A/LM709C
Output Short-Circuit Duration (T
A
e a
25
§
C)
LM709/LM709A/LM709C
g
10V
5 seconds
Storage Temperature Range
LM709/LM709A/LM709C
b
65
§
C to
a
150
§
C
Lead Temperature (Soldering, 10 sec.)
LM709/LM709A/LM709C
300
§
C
Operating Ratings
(Note 3)
Junction Temperature Range (Note 1)
LM709/LM709A
LM709C
b
55
§
C to
a
150
§
C
0
§
C to
a
100
§
C
Thermal Resistance (
i
JA
)
H Package
8-Pin N Package
14-Pin N Package
150
§
C/W, (
i
JC
) 45
§
C/W
134
§
C/W
109
§
C/W
Electrical Characteristics
(Note 2)
Parameter
Conditions
LM709A
LM709
LM709C
Units
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Input Offset Voltage
T
A
e
25
§
C, R
S
s
10 k
X
T
A
e
25
§
C
T
A
e
25
§
C
T
A
e
25
§
C
T
A
e
25
§
C
T
A
e
25
§
C, V
S
e
g
15V
0.6
2.0
1.0
5.0
2.0
7.5
mV
Input Bias Current
100
200
200
500
300
1500
nA
Input Offset Current
10
50
50
200
100
500
nA
Input Resistance
350
700
150
400
50
250
k
X
Output Resistance
150
150
150
X
Supply Current
2.5
3.6
2.6
5.5
2.6
6.6
mA
Transient Response
Risetime
Overshoot
V
IN
e
20 mV, C
L
s
100 pF
T
A
e
25
§
C
1.5
30
0.3
10
1.0
30
0.3
10
1.0
30
m
s
%
Slew Rate
T
A
e
25
§
C
0.25
0.25
0.25
V/
m
s
Input Offset Voltage
R
S
s
10 k
X
3.0
6.0
10
mV
Average Temperature
Coefficient of
Input Offset Voltage
R
S
e
50
X
T
A
e
25
§
C to T
MAX
T
A
e
25
§
C to T
MIN
T
A
e
25
§
C to T
MAX
T
A
e
25
§
C to T
MIN
1.8
1.8
2.0
4.8
10
10
15
25
3.0
6.0
6.0
12
m
V/
§
C
R
S
e
10 k
X
Large Signal
Voltage Gain
V
S
e
g
15V, R
L
t
2 k
X
V
OUT
e
g
10V
25
70
25
45
70
15
45
V/mV
Output Voltage Swing
V
S
e
g
15V, R
L
e
10 k
X
V
S
e
g
15V, R
L
e
2 k
X
g
12
g
10
g
14
g
13
g
12
g
10
g
14
g
13
g
12
g
10
g
14
g
13
V
Input Voltage Range
V
S
e
g
15V
g
8
g
8
g
10
g
8
g
10
V
Common-Mode
Rejection Ratio
R
S
s
10 k
X
80
110
70
90
65
90
dB
Supply Voltage
Rejection Ratio
R
S
s
10 k
X
40
100
25
150
25
200
m
V/V
Input Offset Current
T
A
e
T
MAX
T
A
e
T
MIN
3.5
40
50
250
20
100
200
500
75
125
400
750
nA
Input Bias Current
T
A
e
T
MIN
0.3
0.6
0.5
1.5
0.36
2.0
m
A
Input Resistance
T
A
e
T
MIN
85
170
40
100
50
250
k
X
Note 1:
For operating at elevated temperatures, the device must be derated based on a 150
§
C maximum junction temperature for LM709/LM709A and 100
§
C
maximum for L709C. For operating at elevated temperatures, the device must be derated based on thermal resistance
i
JA
, T
J(MAX)
and T
A
.
Note 2:
These specifications apply for
b
55
§
C
s
T
A
s
a
125
§
C for the LM709/LM709A and 0
§
C
s
T
A
s
a
70
§
C for the LM709C with the following conditions:
g
9V
s
V
S
s g
15V, C1
e
5000 pF, R1
e
1.5 k
X
, C2
e
200 pF and R2
e
51
X
.
Note 3:
Absolute Maximum Ratings indicate limits which if exceeded may result in damage. Operating Ratings are conditions where the device is expected to be
functional but not necessarily within the guaranteed performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
2
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