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參數資料
| 型號： | LM831N |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 音頻／視頻放大 |
| 英文描述： | LM831 Low Voltage Audio Power Amplifier |
| 中文描述： | 0.22 W, 2 CHANNEL, AUDIO AMPLIFIER, PDIP16 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-16 |
| 文件頁數： | 2/14頁 |
| 文件大小： | 309K |
| 代理商： | LM831N |
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage, V
S
Input Voltage, V
IN
Power Dissipation (Note 1), P
D
7.5V
g
0.4V
1.3W (M Package)
1.4W (N Package)
b
40
§
C to
a
85
§
C
Operating Temperature (Note 1), T
opr
Storage Temperature, T
stg
Junction Temperature, T
j
Lead Temp. (Soldering, 10 sec.), T
L
Thermal Resistance
i
JC
(DIP)
i
JA
(DIP)
i
JC
(SO Package)
i
JA
(SO Package)
b
65
§
C to
a
150
§
C
a
150
§
C
a
260
§
C
27
§
C/W
75
§
C/W
20
§
C/W
95
§
C/W
Electrical Characteristics
Unless otherwise specified, T
A
e
25
§
C, V
S
e
3V, f
e
1 kHz, test circuit is dual or BTL amplifier with minimum parts.
Symbol
Parameter
Conditions
Typ
Tested Limit
Unit (Limit)
V
S
Operating Voltage
3
3
1.8
6
V(Min)
V(Max)
I
Q
Supply Current
V
IN
e
0, Dual Mode
V
IN
e
0, BTL Mode
V
IN
e
0, BTL Mode
5
6
10
15
mA (Max)
mA (Max)
V
OS
R
IN
Output DC Offset
10
50
mV (Max)
Input Resistance
25
15
35
k (Min)
k (Max)
A
V
Voltage Gain
V
IN
e
2.25 mV
rms
, f
e
1 kHz,
Dual Mode
46
44
48
dB (Min)
dB (Max)
PSRR
Supply Rejection
V
S
e
3V
a
200 mV
rms
@
f
e
1 kHz
V
S
e
3V, R
L
e
4
X
,
10% THD, Dual Mode
46
30
dB (Min)
P
OD
Power Out
220
150
mW (Min)
P
ODL
Power Out Low, V
S
V
S
e
1.8V, R
L
e
4
X
,
10% THD, Dual Mode
45
10
mW (Min)
P
OB
Power Out
V
S
e
3V, R
L
e
8
X
,
10% THD, BTL Mode
440
300
mW (Min)
P
OBL
Power Out Low, V
S
V
S
e
1.8V, R
L
e
8
X
,
10% THD, BTL Mode
90
20
mW (Min)
Sep
Channel Separation
Referenced to V
O
e
200 mV
rms
52
40
dB (Min)
I
B
E
n0
THD
Input Bias Current
1
2
m
A (Max)
Output Noise
Wide Band (250
E
35 kHz)
V
S
e
3V, P
O
e
50 mW,
f
e
1 kHz, Dual
250
500
m
V (Max)
Distortion
0.25
1
% (Max)
Note 1:
For operation in ambient temperatures above 25
§
C, the device must be derated based on a 150
§
C maximum junction temperature and a thermal resistance
of 98
§
C/W junction to ambient for the M package or 90
§
C/W junction to ambient for the N package.
Connection Diagram
Dual-In-Line Package
TL/H/6754–2
Top View
Order Number LM831M or N
See NS Package Number M16B or N16E
2
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