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參數資料
| 型號： | LM9061N |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | MOSFETs |
| 英文描述： | Power MOSFET Driver with Lossless Protection |
| 中文描述： | BUF OR INV BASED MOSFET DRIVER, PDIP8 |
| 封裝： | DIP-8 |
| 文件頁數： | 6/14頁 |
| 文件大小： | 234K |
| 代理商： | LM9061N |
Typical Electrical Characteristics
(Continued)
Timing Definitions
TL/H/12317–07
Application Hints
BASIC OPERATION
The LM9061 contains a charge pump circuit that generates
a voltage in excess of the applied supply voltage to provide
gate drive voltage to power MOSFET transistors. Any size
of N-channel power MOSFET, including multiple parallel
connected MOSFETs for very high current applications, can
be used to apply power to a ground referenced load circuit
in what is referred to as ‘‘high side drive’’ applications.
Figure 1 shows the basic application of the LM9061.
TL/H/12317–8
FIGURE 1. Basic Application Circuit
When commanded ON by a logic ‘‘1’’ input to pin 7, the gate
drive output, pin 4, rises quickly to the V
CC
supply potential
at pin 5. Once the gate voltage exceeds the gate-source
threshold voltage of the MOSFET, V
GS(ON)
, (the source is
connected to ground through the load) the MOSFET turns
ON and connects the supply voltage to the load. With the
source at near the supply potential, the charge pump contin-
ues to provide a gate voltage greater than the supply to
keep the MOSFET turned ON. To protect the gate of the
MOSFET, the output voltage of the LM9061 is clamped to
limit the maximum V
GS
to 15V.
It is important to remember that during the Turn-ON of the
MOSFET the output current to the Gate is drawn from the
V
CC
supply pin. The V
CC
pin should be bypassed with a
capacitor with a value of at least ten times the Gate capaci-
tance, and no less than 0.1
m
F. The output current into the
Gate will typically be 30 mA with V
CC
at 14V and the Gate at
0V. As the Gate voltage rises to V
CC
, the output current will
decrease. When the Gate voltage reaches V
CC
, the output
current will typically be 1 mA with V
CC
at 14V.
A logic ‘‘0’’ on pin 7 turns the MOSFET OFF. When com-
manded OFF a 110
m
A current sink is connected to the
output pin. This current discharges the gate capacitances of
the MOSFET linearly. When the gate voltage equals the
source voltage (which is near the supply voltage) plus the
V
GS(ON)
threshold of the MOSFET, the source voltage
starts following the gate voltage and ramps toward ground.
Eventually the source voltage equals 0V and the gate con-
tinues to ramp to zero thus turning OFF the power device.
This gradual Turn-OFF characteristic, instead of an abrupt
removal of the gate drive, can, in some applications, mini-
mize the power dissipation in the MOSFET or reduce the
duration of negative transients, as is the case when driving
inductive loads. In the event of an overstress condition on
the power device, the turn OFF characteristic is even more
gradual as the output sinking current is only 10
m
A (see
Protection Circuitry Section).
6
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