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參數資料
| 型號： | LMA110B |
| 英文描述： | .5-8GHz MESFET Amplifier |
| 中文描述： | 0.5 - 8GHz的場效應管放大器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 80K |
| 代理商： | LMA110B |
Filtronic
Solid State
.5-6 GHz MESFET Amplifier
LMA110A
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Features
2.7dB Typical Noise Figure
23dB Typical Gain
12dBm Saturated Output Power
12dB Input/Output Return Loss Typical
0.5-6GHz Frequency Bandwidth
+8.5 Volts Dual Bias Supply
DC Decoupled RF Input and Output
Chip Size : 1.62
mm
X1.62
mm
(.064”X.064”)
Chip Thickness : 100
μ
m
Pad Dimension : 100
μ
m
2
Description
The Filtronic LMA110A is a GaAs monolithic distributive amplifier which operates from 0.5 to 6 GHz. This amplifier produces a typical gain of
23dB with a noise figure of 2.7dB. The LMA110A is suitable for wide-band low noise gain block, EW and commercial PCN applications. DC
decoupled input and output RF port. Ground is provided to the circuitry through vias to the backside metallization.
Electrical Specifications
at T
a
=25
°
C
(V
DD
=+8.0V, Zin=Zout=50
)
Absolute Maximum Ratings
Note
s:
1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
2. Specifications subject to change without notice.
DSS 004 WD
Limit
Typ.
Symbol
BW
S21
Ids
S21
NF
RLin
RLout
S12
P-1dB
Parameter
Operating Bandwidth
Small Signal Gain
Drain Operating Current
Small Signal Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
1-dB Gain Compression Power
Test Conditions
Min.
0.5
20
60
Max.
6
Units
GHz
dB
mA
dB
dB
dB
dB
dB
dBm
V
D
=8V, Vg=-.85V
23
100
±
0.4
2.7
-10
-10
-45
10
150
±
1
3.5
@ 50% Idss
-35
7
Symbol
Vdd
Idd
Pin
Pt
Tch
Tstg
Tmax.
Parameter/Conditions
Drain Supply Voltage
Total Drain Current
RF Input Power
Power Dissipation
Operating Channel Temperature
Storage Temperature
Max. Assembly Temp.
(1 min. max.)
Min.
Max.
12
150
24
1.8
150
165
300
Units
Volts
mA
dBm
W
°
C
°
C
°
C
-65
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