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參數資料
| 型號： | LMA184 |
| 英文描述： | 2-18 GHz MESFET Amplifier |
| 中文描述： | 2-18 GHz的場效應晶體管放大器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 67K |
| 代理商： | LMA184 |
Filtronic
Solid State
2-18 GHz MESFET Amplifier
LMA184
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Features
5.5dB Typical Noise Figure
7.5dB Typical Gain
15dBm Saturated Output Power
12dB Input/Output Return Loss Typical
2-18GHz Frequency Bandwidth
+4 Volts Dual Bias Supply
DC Decoupled RF Output
Chip Size : 1.62
mm
X2.38
mm
(.064”X.094”)
Chip Thickness : 100
μ
m
Pad Dimension : 100
μ
m
2
Description
The Filtronic LMA184 is a GaAs monolithic distributive amplifier which operates from 2 to 18GHz. This LMA184 amplifier produces a typical
gain of 7.5dB and a noise figure of less than 5.5dB. The LMA184 is suitable for gain block, low noise and driver amplifier applications. DC
decoupled output RF port. Ground is provided to the circuitry through vias to the backside metallization.
Electrical Specifications
at T
a
=25
°
C
(V
DD
=+4.0V, Zin=Zout=50
)
Absolute Maximum Ratings
Notes
:
1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
2. Specifications subject to change without notice.
DSS 008 WC
Limit
Typ.
Symbol
BW
S21
Idss
S21
NF
RLin
RLout
S12
P-1dB
Parameter
Operating Bandwidth
Small Signal Gain
Drain Current at Saturation
Small Signal Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
1-dB Gain Compression Power
Test Conditions
Min.
2
6
60
Max.
18
Units
GHz
dB
mA
dB
dB
dB
dB
dB
dBm
V
D
=4V, Ids=.5Idss
7.5
120
±
.5
5.5
-14
-14
-16
12
180
±
1
7
-10
-10
@ .5Idss
-13
10
Symbol
Vdd
Idd
Pin
Pt
Tch
Tstg
Tmax.
Parameter/Conditions
Drain Supply Voltage
Total Drain Current
RF Input Power
Power Dissipation
Operating Channel Temperature
Storage Temperature
Max. Assembly Temp.
(1 min. max.)
Min.
Max.
8
180
20
1.5
150
165
300
Units
Volts
mA
dBm
W
°
C
°
C
°
C
-65
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