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參數資料
| 型號： | LMC660CN |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | RF CONNECTOR; 75 OHM N MALE, PANEL MOUNT, SOLDER CUP CONTACT |
| 中文描述： | QUAD OP-AMP, 6300 uV OFFSET-MAX, 1.4 MHz BAND WIDTH, PDIP14 |
| 封裝： | DIP-14 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 461K |
| 代理商： | LMC660CN |
LMC660
CMOS Quad Operational Amplifier
General Description
The LMC660 CMOS Quad operational amplifier is ideal for
operation from a single supply. It operates from +5V to +15V
and features rail-to-rail output swing in addition to an input
common-mode range that includes ground. Performance
limitations that have plagued CMOS amplifiers in the past
are not a problem with this design. Input V
, drift, and
broadband noise as well as voltage gain into realistic loads
(2 k
and 600
) are all equal to or better than widely ac-
cepted bipolar equivalents.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LMC662 datasheet for a dual CMOS operational
amplifier with these same features.
Features
n
Rail-to-rail output swing
n
Specified for 2 k
and 600
loads
n
High voltage gain:
n
Low input offset voltage:
n
Low offset voltage drift:
126 dB
3 mV
1.3 μV/C
n
Ultra low input bias current:
n
Input common-mode range includes V
n
Operating range from +5V to +15V supply
n
I
SS
= 375 μA/amplifier; independent of V
+
n
Low distortion:
0.01% at 10 kHz
n
Slew rate:
1.1 V/μs
n
Available in extended temperature range (40C to
+125C); ideal for automotive applications
n
Available to Standard Military Drawing specification
2 fA
Applications
n
High-impedance buffer or preamplifier
n
Precision current-to-voltage converter
n
Long-term integrator
n
Sample-and-Hold circuit
n
Peak detector
n
Medical instrumentation
n
Industrial controls
n
Automotive sensors
Connection Diagram
14-Pin DIP/SO
DS008767-1
April 1998
L
1999 National Semiconductor Corporation
DS008767
www.national.com
相關PDF資料 |
PDF描述 |
|---|---|
| LMC660 | CMOS Quad Operational Amplifier |
| LMC662AIM | CMOS Dual Operational Amplifier |
| LMC662AIN | CMOS Dual Operational Amplifier |
| LMC662AMD | CMOS Dual Operational Amplifier |
| LMC662CM | CMOS Dual Operational Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LMC660CN | 制造商:Texas Instruments 功能描述:IC OP AMP QUAD CMOS DIP14 660 |
| LMC660CN/NOPB | 功能描述:運算放大器 - 運放 CMOS Quad Op Amp RoHS:否 制造商:STMicroelectronics 通道數量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LMC660EM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Texas Instruments 功能描述: |
| LMC660EN | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| LMC660EP | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:CMOS Quad Operational Amplifier |
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