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參數資料
| 型號： | LMC662AIN |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運算放大器 |
| 英文描述： | CMOS Dual Operational Amplifier |
| 中文描述： | DUAL OP-AMP, 3300 uV OFFSET-MAX, 1.4 MHz BAND WIDTH, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁數： | 4/13頁 |
| 文件大小： | 430K |
| 代理商： | LMC662AIN |
AC Electrical Characteristics
(Continued)
Note 1:
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts
can result in exceeding the maximum allowed junction temperature of 150C. Output currents in excess of
±
30 mA over long term may adversely affect reliability.
Note 2:
The maximum power dissipation is a function of T
J(max)
,
θ
JA
, and T
A
. The maximum allowable power dissipation at any ambient temperature is P
D
=
(T
J(max)
–T
A
)/
θ
JA
.
Note 3:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in-
tended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 4:
Typical values represent the most likely parametric norm. Limits are guaranteed by testing or correlation.
Note 5:
V
+
= 15V, V
CM
= 7.5V and R
L
connected to 7.5V. For Sourcing tests, 7.5V
≤
V
O
≤
11.5V. For Sinking tests, 2.5V
≤
V
O
≤
7.5V.
Note 6:
V
+
= 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
Note 7:
Input referred. V
+
= 15V and R
L
= 10 k
connected to V
+
/2. Each amp excited in turn with 1 kHz to produce V
O
= 13 V
PP
.
Note 8:
Human body model, 1.5 k
in series with 100 pF.
Note 9:
A military RETS electrical test specification is available on request. At the time of printing, the LMC662AMJ/883 RETS spec complied fully with the
boldface
limits in this column. The LMC662AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 10:
For operating at elevated temperatures the device must be derated based on the thermal resistance
θ
JA
with P
D
= (T
J
–T
A
)/
θ
JA
.
Note 11:
All numbers apply for packages soldered directly into a PC board.
Note 12:
Do not connect output to V
+
when V
+
is greater than 13V or reliability may be adversely affected.
Typical Performance Characteristics
V
S
=
±
7.5V, T
A
= 25C unless otherwise specified
Supply Current vs
Supply Voltage
DS009763-24
Offset Voltage
DS009763-25
Input Bias Current
DS009763-26
Output Characteristics
Current Sinking
DS009763-27
Output Characteristics
Current Sourcing
DS009763-28
Input Voltage Noise
vs Frequency
DS009763-29
www.national.com
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|---|---|
| LMC662AMD | CMOS Dual Operational Amplifier |
| LMC662CM | CMOS Dual Operational Amplifier |
| LMC662CN | CMOS Dual Operational Amplifier |
| LMC662EM | CMOS Dual Operational Amplifier |
| LMC662EN | CMOS Dual Operational Amplifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LMC662AIN | 制造商:Texas Instruments 功能描述:IC OP AMP DUAL CMOS DIP8 662 |
| LMC662AIN/NOPB | 功能描述:運算放大器 - 運放 CMOS Dual Op Amp RoHS:否 制造商:STMicroelectronics 通道數量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LMC662AMD | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:CMOS Dual Operational Amplifier |
| LMC662AMJ/883 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:CMOS Dual Operational Amplifier |
| LMC662CM | 功能描述:運算放大器 - 運放 RoHS:否 制造商:STMicroelectronics 通道數量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
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