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參數資料
型號: LMV228SDX
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 無繩電話/電話
英文描述: RF Power Detector for CDMA and WCDMA
中文描述: TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, DSO6
封裝: 2.20 X 2.50 MM, 0.80 MM HEIGHT, LLP-6
文件頁數: 6/21頁
文件大小: 1090K
代理商: LMV228SDX
5.0 DC and AC Electrical Characteristics
(Continued)
Unless otherwise specified, all limits are guaranteed to V
DD
= 5.0V; T
J
= 25C.
Boldface
limits apply at temperature extremes.
(Note 4)
Symbol
Parameter
Condition
Min
Typ
+0.89
1.16
+0.25
0.16
+0.46
0.62
+0.3
0.82
+0.21
0.09
+0.55
0.78
+0.34
0.63
+0.21
0.19
+0.55
0.93
+0.22
0.75
+0.25
0.34
+0.61
0.91
Max
Units
Variation Due to Temperature
900 MHz, RF
IN
= 0 dBm
Referred to 25C
900 MHz, RF
IN
= 15 dBm
Referred to 25C
LMV225
dB
LMV226
LMV228
1800 MHz, RF
IN
= 0 dBm
Referred to 25C
1800 MHz, RF
IN
= 15 dBm
Referred to 25C
LMV225
LMV226
LMV228
1900 MHz, RF
IN
= 0 dBm
Referred to 25C
1900 MHz, RF
IN
= 15 dBm
Referred to 25C
LMV225
LMV226
LMV228
2000 MHz RF
IN
= 0 dBm
Referred to 25C
2000 MHz RF
IN
= 15 dBm
Referred to 25C
LMV225
LMV226
LMV228
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2:
Human body model: 1.5 k
in series with 100 pF. Machine model, 0
in series with 100 pF.
Note 3:
The maximum power dissipation is a function of T
J(MAX)
,
θ
JA
and T
A
. The maximum allowable power dissipation at any ambient temperature is P
D
=
(T
J(MAX)
- T
A
)/
θ
JA
. All numbers apply for packages soldered directly into a PC board
Note 4:
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that T
J
= T
A
. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T
J
>
T
A
.
Note 5:
Power in dBV = dBm + 13 when the impedance is 50
.
Note 6:
All limits are guaranteed by design or statistical analysis
Note 7:
Typical values represent the most likely parametric norm.
Note 8:
Device is set in active mode with a 10 k
resistor from V
DD
to RF
IN
/E
N
. RF signal is applied using a 50
RF signal generator AC coupled to the RF
IN
/E
N
pin using a 100 pF coupling capacitor.
Note 9:
Turn-on time is measured by connecting a 10 k
resistor to the RF
IN
/E
N
pin. Be aware that in the actual application on the front page, the RC-time constant
of resistor R
2
and capacitor C adds an additional delay.
L
www.national.com
6
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