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參數資料
| 型號： | LMX2119 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | 1.9 GHz Power Amplifier |
| 中文描述： | 1.9 GHz功率放大器 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 122K |
| 代理商： | LMX2119 |
TL/W/12686
L
PRELIMINARY
June 1996
LMX2119 1.9 GHz Power Amplifier
General Description
The LMX2119 1.9 GHz Power Amplifier is a monolithic, inte-
grated power amplifier suitable for use in the Digital Europe-
an Cordless Telecommunications (DECT) system as well as
other mobile telephony and wireless communications appli-
cations. It is fabricated using an advanced Gallium Arsenide
technology that allows single supply (
a
3V) operation.
The LMX2119 consists of two MESFETs cascaded to pro-
vide 24.5 dB of power gain. The output power at 3.6V is
a
26.5 dBm with an input power level of
a
2 dBm. The input
VSWR of the power amplifier remains constant in the ON
and OFF state.
The LMX2119 is available in a 16-pin SOIC surface mount
plastic package.
Features
Y
Single
a
3V supply operation
Y
Class A bias;
l
30% power added efficiency
Y
24.5 dB power gain;
a
26.5 dBm output power
Y
50
X
input/output impedance
Y
350 mA current consumption at
a
3.6V
Applications
Y
Digital European Cordless Telecommunications (DECT)
Y
Portable wireless communications (PCS/PCN, cordless)
Y
Wireless local area networks (WLANs)
Y
Other wireless communications systems
Functional Block Diagram
TL/W/12686–1
This data sheet contains the design specifications for product development.
Specifications may change in any manner without notice.
C
1996 National Semiconductor Corporation
RRD-B30M27/Printed in U. S. A.
http://www.national.com
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