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參數資料
| 型號： | LP6872P100 |
| 英文描述： | Packaged 0.5W Power PHEMT |
| 中文描述： | 為0.5W功率PHEMT器件封裝 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 38K |
| 代理商： | LP6872P100 |
LP6872
0.5W
P
OWER
PHEMT
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/18/01
Email:
sales@filss.com
FEATURES
27 dBm Output Power at 1-dB
Compression at 18 GHz
9.5 dB Power Gain at 18 GHz
55% Power-Added Efficiency
DESCRIPTION AND APPLICATIONS
The LP6872 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
μ
m by 720
μ
m Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for reliable high-power applications. The LP6872 also features Si
3
N
4
passivation.
Typical applications include commercial wireless infrastructure amplifiers, such as SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital
radio transmitters.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25
°
C
Parameter
Symbol
I
DSS
P-1dB
G-1dB
PAE
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 4 mA
I
GS
= 4 mA
Min
180
Typ
245
Max
260
Units
mA
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
25
8
27
9.5
55
385
220
5
dBm
dB
%
mA
mS
μ
A
V
V
175
40
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
-0.25
-10
-1.2
-13
-2.0
|V
BDGD
|
I
GD
= 4 mA
-10
-14
V
Θ
JC
70
°
C/W
DRAIN
BOND
PAD (2X)
SOURCE
BOND
PAD (2x)
DIE SIZE: 14.6X19.7 mils (370x500
μ
m)
DIE THICKNESS: 3.0 mils (75
μ
m)
BONDING PADS: 1.9X2.4 mils (50x60
μ
m)
GATE
BOND
PAD (2X)
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