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參數資料
| 型號： | LPS200 |
| 英文描述： | HIGH PERFORMANCE LOW NOISE PHEMT |
| 中文描述： | 高性能，低噪音PHEMT器件 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 59K |
| 代理商： | LPS200 |
LPS200P70
P
ACKAGED
L
OW
N
OISE
PHEMT
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
1/20/01
Email:
sales@filss.com
FEATURES
0.7 dB Noise Figure at 12 GHz
12 dB Associated Gain at 12 GHz
0.6 dB Noise Figure at 2 GHz
14 dB Associated Gain at 2 GHz
Low DC Power Consumption
DESCRIPTION AND APPLICATIONS
The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25
μ
m by 200
μ
m Schottky barrier gate. The recessed “mushroom”
Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for high dynamic range. The LPS200’s active areas are
passivated with Si
3
N
4
, and the P70 ceramic package is ideal for low-cost, high-performance
applications that require a surface-mount package.
Typical applications include low noise receiver preamplifiers for commercial applications including
Cellular/PCS systems and broad band commercial instrumentation.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25
°
C*
Parameter
Symbol
I
DSS
NF
G
A
G
M
I
GSO
V
P
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 2 V; I
DS
= 25% I
DSS
V
DS
= 2 V; I
DS
= 25% I
DSS
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 2 V; I
DS
= 1 mA
Min
15
Typ
Max
50
Units
mA
Saturated Drain-Source Current**
Noise Figure
Associated Gain at minimum NF
Transconductance
Gate-Source Leakage Current
0.7
12
80
1
1.3
dB
dB
mS
μ
A
V
10.5
60
15
Pinch-Off Voltage
-0.25
-0.8
-1.5
*frequency=12 GHz, unless otherwise noted
**Formerly binned as: LPS200P70-1 = 15-30 mA and LPS200P70–2 = 31-50 mA
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