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參數資料
| 型號： | LS3955 |
| 廠商： | Linear Integrated Systems |
| 英文描述： | LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| 中文描述： | 低噪聲低漂移整體式雙N溝道結型場效應管 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 33K |
| 代理商： | LS3955 |
Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
S1
3
BOTTOM VIEW
2
6
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
|
V
GS1-2
/
T| max.
LS3954A LS3954 LS3955 LS3956 LS3958 UNITS CONDITIONS
5
10
25
50
Drift vs. Temperature
100
μ
V/
°
C
V
DG
= 20V, I
D
= 200
μ
A
T
A
= -55
°
C to +125
°
C
V
DG
= 20V, I
D
= 200
μ
A
|V
GS1-2
| max.
Offset Voltage
5
5
10
15
25
mV
G1
S2
G2
S1
D2
D1
D2
G2
G1
D1
S2
31 X 32 MILS
FEATURES
LOW DRIFT
LOW LEAKAGE
LOW NOISE
|
V
GS1-2
/
T|= 5
μ
V/
°
C max.
I
G
= 20pA TYP.
e
n
= 10nV/
√
Hz TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°
C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65
°
to +200
°
C
+150
°
C
Maximum Voltage and Current for Each Transistor NOTE 1
-V
GSS
-V
DSO
-I
G(f)
Gate to Drain or Source Voltage
Drain to Source Voltage
Gate Forward Current
60V
60V
50mA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ 25
°
C
LOW NOISE LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
SYMBOL
BV
GSS
BV
GGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Operating
High Temperature
Reduced V
DG
At Full Conduction
MIN.
60
60
TYP.
--
--
MAX.
--
--
UNITS CONDITIONS
V
V
DS
= 0
V
I
G
= 1nA
I
D
= 1
μ
A
I
D
= 0
I
S
= 0
Y
fss
Y
fs
|Y
fs1-2
/Y
fs
|
1000
500
--
2000
700
0.6
3000
1000
3
μ
mho
μ
mho
%
V
DG
= 20V
V
DG
= 20V
V
GS
= 0
I
D
= 200
μ
A
f= 1kHz
I
DSS
|I
DSS1-2
/I
DSS
|
0.5
--
2
1
5
5
mA
%
V
DG
= 20V
V
GS
= 0
V
GS
(off) or V
P
V
GS
1
0.5
2
--
4.5
4
V
V
V
DS
= 20V
V
DS
= 20V
I
D
= 1nA
I
D
= 200
μ
A
-I
G
-I
G
-I
G
-I
GSS
--
--
--
--
20
--
5
--
50
50
--
100
pA
nA
pA
pA
V
DG
= 20V
V
DG
= 20V
V
DG
= 10V
V
DG
= 20V
I
D
= 200
μ
A
I
D
= 200
μ
A
I
D
= 200
μ
A
V
DS
= 0
T
A
=+125
°
C
LS3954A LS3954 LS3955
LS3956 LS3958
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|---|---|
| LS3956 | LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
| LS3958 | LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET |
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| LS411060 | POW-R-BLOK Single Diode Isolated Module (600 Amperes / Up to 2400 Volts) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| LS3955_PDIP | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Monolithic Dual N-Channel JFET |
| LS3955_SOIC | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Monolithic Dual N-Channel JFET |
| LS3955_SOT-23 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Monolithic Dual N-Channel JFET |
| LS3955_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Monolithic Dual N-Channel JFET |
| LS3955_TO-78 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:Monolithic Dual N-Channel JFET |
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